SDT06S60 Infineon Technologies, SDT06S60 Datasheet
SDT06S60
Specifications of SDT06S60
SDT06S60X
SDT06S60XK
SDT06S60XTIN
SDT06S60XTIN
SP000013823
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SDT06S60 Summary of contents
Page 1
... SiC Schottky Diode Product Summary V RRM PG-TO220-2-2. Marking Pin 1 Pin 2 D06S60 n.c. C D06S60 Value 6 F 8.4 FRMS 21.5 FSM 28 FRM 60 FMAX 2 600 RRM 600 RSM 57.6 tot T -55... +175 j , stg SDP06S60 SDT06S60 V 600 P-TO220 Pin Unit A A² °C 2008-06-02 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol =100°C, η = 93%, ∆ 30% C Page 2 SDP06S60 SDT06S60 Values Unit min. typ. max 2.6 K Values Unit min. typ. max ...
Page 3
... F F Switching time =400V, I =6A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDP06S60 SDT06S60 Values Unit min. typ. max n. 300 - - 2008-06-02 ...
Page 4
... Diode forward current = parameter: T 6.5 A 5.5 4.5 3.5 2.5 1.5 0.5 °C 180 Typ. forward power dissipation vs. average forward current P F(AV 1 Page 4 SDP06S60 ) C ≤ 175 ° 100 120 140 =100° d=0.1 24 d=0.2 d=0 SDT06S60 °C 180 F(AV) 2008-06-02 ...
Page 5
... R parameter ° MHz C 250 pF 150 100 Rev. 2.4 6 Transient thermal impedance thJC parameter : K 600 Typ. C stored energy E =f 3.5 µJ 2.5 2 1 Page 5 SDP06S60 SDT06S60 ) SDP06S60 single pulse - 100 200 300 400 2008-06- 0.50 0.20 0.10 0.05 0.02 0. 600 V R ...
Page 6
... Typ. capacitive charge vs. current slope parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDP06S60 SDT06S60 2008-06-02 ...
Page 7
... P-TO220-3-1, P-TO220-3-21 Rev. 2.4 Page 7 SDP06S60 SDT06S60 2008-06-02 ...
Page 8
... PG-TO-220-2-2 Rev. 2.4 Page 8 SDP06S60 SDT06S60 2008-06-02 ...
Page 9
... Rev. 2.4 Page 9 SDP06S60 SDT06S60 2008-06-02 ...