SDT05S60 Infineon Technologies, SDT05S60 Datasheet - Page 4

• Manufacturer Part Number: SDT05S60
• Description: DIODE SCHOTTKY 5A 600V TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT05S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 170pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 5 A
• Max Surge Current: 18.5 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 14.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT05S60X; SDT05S60XK; SP000014671

1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T j , t
Rev. 2.2
F
tot
= f ( V
= f ( T
W
A
50
40
35
30
25
20
15
10
10
5
0
8
7
6
5
4
3
2
1
0
0
0
SDT05S60
F
)
150°C
125°C
100°C
25°C
-40°C
0.25 0.5 0.75
C
20
)
40
p
60
= 350 µs
1
80 100 120 140 160
1.25 1.5 1.75
2
T
V
V
°C
C
F
190
2.5
Page 4
2 Diode forward current
I
parameter: T
4 Typ. forward power dissipation vs.
average forward current
P
F
F(AV) = f ( I
= f ( T
W
A
4.5
3.5
2.5
1.5
0.5
24
20
18
16
14
12
10
6
5
4
3
2
1
0
8
6
4
2
0
0
0
C
)
F
d=1
d=0.5
d=0.2
d=0.1
20
)
1
j
T
≤ 175 °C
2
40
C
=100°C, d = t
3
60
4
80
5
100 120 140
6
p
/ T
SDT05S60
SDT05S60
7
2008-06-02
8
°C
T
I
A
F(AV)
C
180
10