IGBT 900V 48A 223W TO247

 

APT27GA90BD15

Manufacturer Part NumberAPT27GA90BD15
DescriptionIGBT 900V 48A 223W TO247
ManufacturerMicrosemi Power Products Group
APT27GA90BD15 datasheets

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Specifications of APT27GA90BD15

Igbt TypePTVoltage - Collector Emitter Breakdown (max)900V
Vce(on) (max) @ Vge, Ic3.1V @ 15V, 14ACurrent - Collector (ic) (max)48A
Power - Max223WInput TypeStandard
Mounting TypeThrough HolePackage / CaseTO-247
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT27GA90BD15MI
APT27GA90BD15MI
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High Speed PT IGBT
POWER MOS 8
®
is a high speed Punch-Through switch-mode IGBT. Low E
through leading technology silicon design and lifetime control processes. A reduced E
V
tradeoff results in superior effi ciency compared to other IGBT technologies. Low
CE(ON)
gate charge and a greatly reduced ratio of C
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
FEATURES
• Fast switching with low EMI
• Very Low E
for maximum effi ciency
off
• Ultra low C
for improved noise immunity
res
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
Absolute Maximum Ratings
Symbol
Parameter
Collector Emitter Voltage
V
ces
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
I
Pulsed Collector Current
1
CM
V
Gate-Emitter Voltage
2
GE
P
Total Power Dissipation @ T
D
SSOA
Switching Safe Operating Area @ T
T
, T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
L
Static Characteristics
Symbol
Parameter
V
Collector-Emitter Breakdown Voltage
BR(CES)
V
Collector-Emitter On Voltage
CE(on)
V
Gate Emitter Threshold Voltage
GE(th)
I
Zero Gate Voltage Collector Current
CES
I
Gate-Emitter Leakage Current
GES
/C
provide excellent noise immunity, short
res
ies
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
= 25°C
C
= 100°C
C
= 25°C
C
= 150°C
J
T
= 25°C unless otherwise specifi ed
J
Test Conditions
V
= 0V, I
= 1.0mA
GE
C
V
= 15V,
GE
I
= 14A
C
V
=V
, I
= 1mA
GE
CE
C
V
= 900V,
CE
V
= 0V
GE
V
= ±30V
GS
Microsemi Website - http://www.microsemi.com
APT27GA90BD15
is achieved
off
-
off
APT27GA90BD15
G
C
E
Combi (IGBT and Diode)
Ratings
900
48
27
79
±30
223
79A @ 900V
-55 to 150
300
Min
Typ
Max
900
T
= 25°C
2.5
3.1
J
T
= 125°C
2.2
J
3
4.5
6
T
= 25°C
350
J
T
= 125°C
1500
J
±100
900V
Unit
V
A
V
W
°C
Unit
V
μA
nA

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APT27GA90BD15 Summary of contents

  • Page 1

    ... 1.0mA 15V 14A 1mA 900V ±30V GS Microsemi Website - http://www.microsemi.com APT27GA90BD15 is achieved off - off APT27GA90BD15 Combi (IGBT and Diode) Ratings 900 ±30 223 79A @ 900V -55 to 150 300 Min Typ Max 900 T = 25°C 2.5 3 125° 25°C 350 ...

  • Page 2

    ... GE L= 100uH 900V CE Inductive Switching (25° 600V 15V 14A 10Ω +25°C J Inductive Switching (125° 600V 15V 14A 10Ω +125°C J APT27GA90BD15 Min Typ Max Unit 1390 145 413 μJ 287 137 144 760 μJ 647 Min Typ Max Unit - - .56 °C/W 1 ...

  • Page 3

    ... JUNCTION TEMPERATURE J FIGURE 7, Threshold Voltage vs Junction Temperature T = 150° 25° -55° 25°C. J 250μs PULSE TEST <0.5 % DUTY CYCLE I = 28A 100 125 150 APT27GA90BD15 250 15V 225 13V 200 175 11V 150 10V 125 9V 100 COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° ...

  • Page 4

    ... T 25°C J 200 FIGURE 14, Turn-Off Energy Loss vs Collector Current 2000 1500 28A off, 1000 500 E 7A on2 off FIGURE 16, Switching Energy Losses vs Junction Temperature APT27GA90BD15 V =15V,T =125° =15V,T =25° 600V 10Ω 100μ COLLECTOR-TO-EMITTER CURRENT (A) CE ...

  • Page 5

    ... FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL C ies C oes C res 600 800 SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) T (°C) C .31601 .14513 APT27GA90BD15 1000 100 100 V , COLLECTOR-TO-EMITTER VOLTAGE CE FIGURE 18, Minimum Switching Safe Operating Area Note Duty Factor Peak θ 0.1 ...

  • Page 6

    ... J 90% t d(off Switching Energy Figure 22, Turn-off Switching Waveforms and Defi nitions Gate Voltage Switching Energy Figure 21, Turn-on Switching Waveforms and Defi nitions Gate Voltage Collector Voltage Collector Current APT27GA90BD15 10 125°C J 90% t d(on) Collector Current Collector Voltage ...

  • Page 7

    ... 667V 125° SINGLE PULSE - RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.676 0.504 0.00147 0.0440 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL = 25°C unless otherwise specifi ed. C APT27GA90BD15 Min Type Max 2.5 3.06 1.92 Min Typ Max 235 - - - 185 - - 3 - 300 ...

  • Page 8

    ... Figure 3. Reverse Recovery Time vs. Current Rate of Change 15A 800 1000 1200 Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT27GA90BD15 400 T = 125°C 30A 667V R 350 300 15A 250 200 7.5A ...

  • Page 9

    ... BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT27GA90BD15 APT10035LLL D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 15.49 (.610) 16 ...

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