APT27GA90BD15 Microsemi Power Products Group, APT27GA90BD15 Datasheet - Page 8

• Manufacturer Part Number: APT27GA90BD15
• Description: IGBT 900V 48A 223W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT27GA90BD15

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 14A
• Current - Collector (ic) (max): 48A
• Power - Max: 223W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT27GA90BD15MI; APT27GA90BD15MI

Dynamic Characteristics
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
2000
1800
1600
1400
1200
1000
800
600
400
200
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
30A
t
J
V
R
rr
F
= 125°C
T
F
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
T
V
J
T
I
R
J
= 125°C
RRM
1
, REVERSE VOLTAGE (V)
= 175°C
400
50
Q
7.5A
10
rr
600
75
2
800
100
T
J
T
= -55°C
J
3
t
rr
= 25°C
1000
Q
125
rr
100 200
15A
1200
150
4
T
J
= 25°C unless otherwise specifi ed
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
50
25
20
15
10
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
J
F
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
30A
600
600
100
7.5A
15A
30A
800
125
800
15A
Duty cycle = 0.5
T
APT27GA90BD15
1000
1000
T
J
V
150
J
R
= 175°C
= 125°C
= 667V
7.5A
1200
1200
175