IRG4PH40UPBF International Rectifier, IRG4PH40UPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PH40UPBF
• Description: IGBT UFAST 1200V 30A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH40UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1800 pF
• Current, Collector: 41 A
• Energy Rating: 270 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 160 W
• Resistance, Thermal, Junction To Case: 0.77 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.97 V
• Dc Collector Current: 41A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 41A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH40UPBF

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100
10
5 0
4 0
3 0
2 0
1 0
Fig. 2 - Typical Output Characteristics
1
0
0.1
1

T = 150 C
J
S q u a re wave :
V
CE
o
6 0 % o f ra te d
, Collector-to-Emitter Voltage (V)

Id e a l d io de s
T = 25 C
I
J
vo l ta g e
o

Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
1
f, Frequency (kHz)
10
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
F o r b o th :
D uty c yc le: 50%
T = 125°C
T
G ate driv e as spec ified
P o w e r D is s ip a tio n = 3 5 W
1
J
s ink
5
= 90°C

T = 150 C
J
IRG4PH40UPbF
V
GE
6
1 0
, Gate-to-Emitter Voltage (V)
o

T = 25 C
J
7
T ria n g u la r w a ve :
o

V
5µs PULSE WIDTH
8
CC
C la m p vo l ta g e :
8 0 % o f ra te d
= 50V
I
9
3
1 0 0
10
A