IRG4PH50UPBF International Rectifier, IRG4PH50UPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH50UPBF
• Description: IGBT UFAST 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3600 pF
• Current, Collector: 45 A
• Energy Rating: 170 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.2 V
• Dc Collector Current: 45A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 45
• Ic @ 100c (a): 24
• Vce(on)@25c Typ (v): 2.78
• Vce(on)@25c Max (v): 3.70
• Ets Typ (mj): 1.94
• Ets Max (mj): 2.6
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50UPBF

IRG4PH50UPbF
Electrical Characteristics @ T
Notes:
Q
R
Switching Characteristics @ T
V
V
∆V
V
∆V
g
I
I
V
E
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
E
E
L
C
C
C
CES
GES
d(on)
d(off)
f
d(on)
d(off)
fe
r
r
f
(BR)CES
(BR)ECS
GE(th)
CE(ON)
E
ts
on
off
ts
ts
on
off
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
2
CC
/∆T
/∆T
= 80%(V
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Total Switching Loss
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 5.0Ω,
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
18
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.20
2.56
2.78
3.20
2.54
3600
0.53
1.41
1.94
5.40
0.35
1.43
1.78
4.56
-13
160
200
290
320
280
160
35
—
S
T
U
—
—
—
—
—
—
27
53
35
15
31
18
13
31
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
5000
±100
250
3.5
3.7
6.0
2.0
250
350
500
—
—
—
—
—
—
—
2.6
2.9
40
83
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
µA
nA
ns
ns
mJ
V
nC
nH
V
V
S
pF
V
V
V
V
V
V
V
V
V
Energy losses include "tail"
See Fig. 9, 10, 11, 14,
Measured 5mm from package
ƒ = 1.0MHz
I
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
See Fig. 11, 14
T
I
Energy losses include "tail"
V
V
C
I
I
I
C
C
C
C
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
C
C
C
J
J
J
CC
GE
GE
GE
GE
CC
= 20A
= 24A
= 24A, V
= 24A, V
= 20A, V
= 25°C
= 25°C, V
= 24A
= 45A
= 24A , T
= 150°C
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
C
C
J
= 250µA
= 1.0A
= 1.0mA
CC
CC
CC
C
= 250µA
= 250µA
= 150°C
GE
= 1200V
= 24V, T
= 1200V, T
G
G
= 24A
= 960V
= 960V
= 960V
= 5.0Ω
= 5.0Ω
= 15V, R
See Fig. 8
See Fig. 7
J
= 25°C
V
www.irf.com
See Fig.2, 5
J
GE
= 150°C
G
T
J
= 15V
= 5.0Ω
= 150°C