IRG4PH50UPBF International Rectifier, IRG4PH50UPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH50UPBF
• Description: IGBT UFAST 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3600 pF
• Current, Collector: 45 A
• Energy Rating: 170 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.2 V
• Dc Collector Current: 45A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 45
• Ic @ 100c (a): 24
• Vce(on)@25c Typ (v): 2.78
• Vce(on)@25c Max (v): 3.70
• Ets Typ (mj): 1.94
• Ets Max (mj): 2.6
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50UPBF

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Fig. 9 - Typical Switching Losses vs. Gate
7000
6000
5000
4000
3000
2000
1000
0
Fig. 7 - Typical Capacitance vs.
1
Collector-to-Emitter Voltage
V
CE

V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C ies
C oes
C res
=
=
=
=


0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
Ω
SHORTED
100
20
16
12
8
4
0
Fig. 10 - Typical Switching Losses vs.
0

V
I
Fig. 8 - Typical Gate Charge vs.
CC
C
= 400V
= 24A
Gate-to-Emitter Voltage
IRG4PH50UPbF
Junction Temperature
40
Q , Total Gate Charge (nC)
Ω
G
80
120
160
5
200