IRG4PH50UPBF International Rectifier, IRG4PH50UPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PH50UPBF
• Description: IGBT UFAST 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3600 pF
• Current, Collector: 45 A
• Energy Rating: 170 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.2 V
• Dc Collector Current: 45A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 45
• Ic @ 100c (a): 24
• Vce(on)@25c Typ (v): 2.78
• Vce(on)@25c Max (v): 3.70
• Ets Typ (mj): 1.94
• Ets Max (mj): 2.6
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50UPBF

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1000
100
10
Fig. 2 - Typical Output Characteristics
6 0
4 0
2 0
1
0
0.1
1
S q u a re w a v e :

V
T = 150 C
J
CE
6 0% of rate d
, Collector-to-Emitter Voltage (V)
Id e a l d io d e s
I
volta ge
o

T = 25 C
J

o
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
1
10
f, Frequency (kHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
F o r b o th :
D uty c yc le: 5 0 %
T = 1 25 °C
T
G ate driv e as s pe c ifie d
P ow er D issipa tio n = 40W
1
J
s in k
5

T = 150 C
= 9 0°C
J
6
V
IRG4PH50UPbF
GE
1 0

T = 25 C
o
J
, Gate-to-Emitter Voltage (V)
7
o
8
Tria ngula r w a ve :

9
V
5µs PULSE WIDTH
CC
C lam p v olta ge :
8 0% of ra ted
= 50V
I
10
11
3
12
1 0 0
A