IXGX50N120C3H1 IXYS, IXGX50N120C3H1 Datasheet - Page 2

• Manufacturer Part Number: IXGX50N120C3H1
• Description: IGBT 1200V 95A GENX3 PLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGX50N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 95A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
on
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Part must be heatsunk for high-temp I
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher V
I
F
I
V
I
Inductive load, T
I
V
Note 3
Inductive load, T
I
V
Note 3
I
-di
Test Conditions
Test Conditions
C
C
C
C
F
= 50A, V
CE
CE
CE
= 50A, V
= 50A, V
= 40A, V
= 40A, V
F
= 40A, V
/dt = 2500A/μs, V
= 25V, V
= 0.5 • V
= 0.5 • V
ADVANCE TECHNICAL INFORMATION
GE
GE
GE
GE
GE
CE
= 0V, Note 1
GE
CES
CES
= 0V,
= 15V, V
= 15V
= 15V
= 10V, Note 2
= 0V, f = 1MHz
, R
, R
4,835,592
4,881,106
J
J
G
G
= 25°C
= 125°C
= 2Ω
= 2Ω
R
CE
= 800V
= 0.5 • V
4,931,844
5,017,508
5,034,796
T
J
= 125°C
CES
5,049,961
5,063,307
5,187,117
CES
measurement.
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
Characteristic Values
24
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
Typ.
4250
0.15
75
CE
50
2.1
0.63
455
120
196
123
170
315
2.0
3.0
2.1
(Clamp), T
40
24
84
31
36
64
23
37
0.30 °C/W
Max.
0.27 °C/W
Max.
2.3
2.4
6,404,065 B1
6,534,343
6,583,505
1.2
J
or R
°C/W
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXGK) Outline
PLUS247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXGK50N120C3H1
IXGX50N120C3H1
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
(IXGX) Outline
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190