IXGX50N120C3H1 IXYS, IXGX50N120C3H1 Datasheet - Page 3

• Manufacturer Part Number: IXGX50N120C3H1
• Description: IGBT 1200V 95A GENX3 PLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGX50N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 95A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
100
100
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0
5
0.5
6
1
1.0
7
Fig. 5. Collector-to-Emitter Voltage
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
1.5
8
2
2.0
9
V
V
CE
V
@ 125ºC
CE
@ 25ºC
GE
- Volts
I
25A
- Volts
C
2.5
10
50A
- Volts
3
= 100A
V
GE
V
3.0
11
GE
= 15V
= 15V
13V
11V
13V
11V
4
3.5
12
T
J
4.0
13
= 25ºC
9V
5V
7V
5
9V
7V
5V
4.5
14
5.0
15
6
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
275
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
0
0
4.0
25
0
V
3
GE
4.5
= 15V
Fig. 2. Extended Output Characteristics
13V
50
6
Fig. 4. Dependence of V
5.0
Fig. 6. Input Admittance
9
11V
9V
7V
5V
Junction Temperature
T
J
T
- Degrees Centigrade
J
75
12
V
= 125ºC
5.5
CE
- 40ºC
V
@ 25ºC
25ºC
GE
- Volts
15
- Volts
IXGK50N120C3H1
IXGX50N120C3H1
I
I
I
C
6.0
C
C
= 100A
= 50A
= 25A
100
18
CE(sat)
21
6.5
on
125
24
V
GE
7.0
= 15V
27
150
30
7.5