IXGX50N120C3H1 IXYS, IXGX50N120C3H1 Datasheet - Page 4

• Manufacturer Part Number: IXGX50N120C3H1
• Description: IGBT 1200V 95A GENX3 PLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGX50N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 95A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
60
50
40
30
20
10
10
0.0001
0
0
0
f
10
= 1 MHz
5
20
10
30
Fig. 7. Transconductance
Fig. 9. Capacitance
15
40
0.001
I
V
C
CE
- Amperes
- Volts
50
20
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
T
C ies
C oes
C res
J
30
= - 40ºC
125ºC
25ºC
80
0.01
35
90
Pulse Width - Seconds
100
40
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dV / dt < 10V / ns
V
I
I
J
G
C
G
CE
20
0.1
= 125ºC
= 2Ω
= 50A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
400
40
60
Fig. 8. Gate Charge
600
Q
G
80
- NanoCoulombs
V
CE
100
- Volts
IXGK50N120C3H1
IXGX50N120C3H1
800
1
120
140
1000
IXYS REF: G_50N120C3H1(7N)6-19-09
160
180
1200
10
200