SGD06N60 Infineon Technologies, SGD06N60 Datasheet

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SGD06N60

Manufacturer Part Number
SGD06N60
Description
IGBT NPT 600V 12A 68W TO252-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGD06N60

Package / Case
DPak, TO-252 (5 leads + tab)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 6A
Current - Collector (ic) (max)
12A
Power - Max
68W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
12 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
DPAK (TO-252)
Vce (max)
600.0 V
Ic(max) @ 25°
12.0 A
Ic(max) @ 100°
6.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGD06N60XT
Fast IGBT in NPT-technology
Type
SGP06N60
SGD06N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
PG-TO-252: (reflow soldering, MSL1)
Others: wavesoldering, 1.6mm (0.063 in.) from case for 10s
2
1)
C
C
C
C
CE
GE
J-STD-020 and JESD-022
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
Complete product spectrum and PSpice Models:
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 6 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
= 50 V, R
j
off
compared to previous generation
150 C
600V, T
GE
600V
600V
j
V
p
= 25
CE
limited by T
1)
150 C
2
,
for target applications
6A
6A
I
C
jmax
V
CE(sat)150°C
2.3V
2.3V
http://www.infineon.com/igbt/
150 C
150 C
1
T
j
PG-TO-252-3-1 (D-PAK)
(TO-252AA)
Marking
G06N60
G06N60
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-252-3-11
PG-TO-220-3-1
(TO-220AB)
G
Package
-55...+150
SGD06N60
SGP06N60
Value
C
E
600
260
260
6.9
12
24
24
34
10
68
20
Rev. 2.2
V
A
V
mJ
W
Unit
C
s
Sep 07

Related parts for SGD06N60

SGD06N60 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-252-3-1 (D-PAK) (TO-252AA) for target applications http://www.infineon.com/igbt Marking C CE(sat)150° 2.3V G06N60 150 C 6A 2.3V G06N60 150 C Symbol jmax SGP06N60 SGD06N60 PG-TO-220-3-1 (TO-220AB) Package PG-TO-220-3-1 PG-TO-252-3-11 Value 600 6 -55...+150 260 260 Rev. 2.2 Unit ...

Page 2

... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions PG-TO-220-3 PG-TO-252-3 Symbol Conditions (one layer thick) copper area for 2 SGP06N60 SGD06N60 Max. Value Unit 1.85 K Value Unit min. Typ. max. 600 - - V 1.7 2.0 2.4 - 2.3 2 700 - - 100 350 420 Rev. 2.2 Sep 07 ...

Page 3

... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGP06N60 SGD06N60 Value Unit min. typ. max 220 264 - 0.110 0.127 mJ - 0.105 0.137 - 0.215 0.263 Value Unit min. typ. max 248 298 - ...

Page 4

... Figure 2. Safe operating area ( 15A 10A 5A 0A 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SGP06N60 SGD06N60 200 s 1ms DC 10V 100V 1000V - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...

Page 5

... CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP06N60 SGD06N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 12A 0°C 50°C 100°C 150°C ...

Page 6

... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.25mA SGP06N60 SGD06N60 t d(off d(on 100 150 R , GATE RESISTOR G = 150 400V 6A, C max. typ. ...

Page 7

... K/W ts 0.2 0.1 0. K/W 0. 0.01 E off -2 10 K/W single pulse -3 10 K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGP06N60 SGD06N60 and E include losses off 100 150 R , GATE RESISTOR G = 150 400V 6A 0.705 0.0341 0.561 3.74E-3 ...

Page 8

... GE 100A 80A 60A 40A 20A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGP06N60 SGD06N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...

Page 9

... PG-TO220-3-1 9 SGP06N60 SGD06N60 Rev. 2.2 Sep 07 ...

Page 10

... P-TO252-3-11 10 SGP06N60 SGD06N60 Rev. 2.2 Sep 07 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses SGP06N60 SGD06N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Rev. 2.2 Sep 07 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP06N60 SGD06N60 12 Rev. 2.2 Sep 07 ...

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