SGD02N120 Infineon Technologies, SGD02N120 Datasheet
SGD02N120
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SGD02N120 Summary of contents
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... Operating junction and storage temperature Soldering temperature, PG-TO252 (reflow soldering, MSL3) Other packages: 1.6mm (0.063 in.) from case for 10s 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGD02N120, PG-TO-252-3-11 for target applications (D-PAK) http://www.infineon.com/igbt Marking C ...
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... Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGD02N120, Symbol Conditions PG-TO-220-3 PG-TO-262-3-1 R ...
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... Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy 1) Leakage inductance L and stray capacity C due to dynamic test circuit in figure E. Power Semiconductors SGD02N120, = Symbol Conditions ...
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... 60W 50W 40W 30W 20W 10W 0W 25°C 50°C 75° CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 C) j Power Semiconductors SGD02N120 10A 1A 0.1A 0.01A 1V 10kHz 100kHz V Figure 2. Safe operating area ( 25°C 100°C 125°C Figure 4. Collector current as a function of ...
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... COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( =+150° =+25° =-40° GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors SGD02N120 Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP02N120 ...
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... T , JUNCTION TEMPERATURE j Figure 11. Typical switching times as a function of junction temperature (inductive load 800V +15V/0V 2A dynamic test circuit in Fig.E) Power Semiconductors SGD02N120, 100ns 10ns Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. ...
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... T , JUNCTION TEMPERATURE j Figure 15. Typical switching energy losses as a function of junction temperature (inductive load 800V +15V/0V 2A dynamic test circuit in Fig.E ) Power Semiconductors SGD02N120, 0.5mJ 0.4mJ 0.3mJ 0.2mJ E 0.1mJ off 0.0mJ Figure 14. Typical switching energy losses as a function of gate resistor ...
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... GATE EMITTER VOLTAGE GE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V = 1200V, start Power Semiconductors SGD02N120, 100pF U =960V CE 10pF 10nC 15n 0V V Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 40A 30A 20A 10A 0A 14V ...
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... Power Semiconductors SGD02N120, PG-TO220-3-1 9 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Power Semiconductors SGD02N120, PG-TO252-3-11 10 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Power Semiconductors SGD02N120, PG-TO262-3-1 (I² Pak) 10 ±0 0...0.3 1) 1.27 8.5 0.05 2.4 C 0...0.15 2.4 1. 0.75 ±0 2.54 0. Typical Metal surface min 7.25 6.9 All metal surfaces tin plated, except area of cut. 11 SGP02N120 SGI02N120 4.4 0.5 ±0.1 Rev. 2.3 Sep. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGD02N120, i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF. 12 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGD02N120, 13 SGP02N120 SGI02N120 Rev. 2.3 ...