SGD02N120 Infineon Technologies, SGD02N120 Datasheet

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SGD02N120

Manufacturer Part Number
SGD02N120
Description
IGBT NPT 1200V 6.2A 62W TO252-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGD02N120

Package / Case
DPak, TO-252 (5 leads + tab)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
DPAK (TO-252)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGD02N120XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGD02N120
Manufacturer:
infineon
Quantity:
647
Fast IGBT in NPT-technology
Type
SGP02N120
SGD02N120
SGI02N120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
PG-TO252 (reflow soldering, MSL3)
Other packages: 1.6mm (0.063 in.) from case for 10s
1
2
Power Semiconductors
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
40% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology offers:
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 2A, V
= 25 C
= 100 C
= 25 C
= 15V, 100V
1200V, T
- Motor controls
- Inverter
- SMPS
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
CC
= 50V, R
off
j
compared to previous generation
150 C
V
1200V
1200V
1200V
CC
GE
V
CE
= 25 , start at T
1200V, T
p
limited by T
2
1
2A
2A
2A
I
C
for target applications
j
150 C
jmax
0.11mJ
0.11mJ
0.11mJ
j
= 25 C
E
off
SGD02N120,
http://www.infineon.com/igbt/
150 C
150 C
150 C
T
1
j
PG-TO-252-3-11
(D-PAK)
GP02N120
GI02N120
Marking
02N120
Symbol
V
I
I
-
V
E
t
P
T
-
C
C p u l s
S C
j
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-252-3-11
PG-TO-262-3-1
PG-TO-220-3-1
G
Package
SGP02N120
-55...+150
SGI02N120
Value
1200
260
260
6.2
2.8
9.6
9.6
10
10
62
20
C
E
Rev. 2.3
PG-TO-262-3-1
(I²-PAK)
V
A
V
mJ
W
Unit
C
s
Sep. 07

Related parts for SGD02N120

SGD02N120 Summary of contents

Page 1

... Operating junction and storage temperature Soldering temperature, PG-TO252 (reflow soldering, MSL3) Other packages: 1.6mm (0.063 in.) from case for 10s 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGD02N120, PG-TO-252-3-11 for target applications (D-PAK) http://www.infineon.com/igbt Marking C ...

Page 2

... Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGD02N120, Symbol Conditions PG-TO-220-3 PG-TO-262-3-1 R ...

Page 3

... Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy 1) Leakage inductance L and stray capacity C due to dynamic test circuit in figure E. Power Semiconductors SGD02N120, = Symbol Conditions ...

Page 4

... 60W 50W 40W 30W 20W 10W 0W 25°C 50°C 75° CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 C) j Power Semiconductors SGD02N120 10A 1A 0.1A 0.01A 1V 10kHz 100kHz V Figure 2. Safe operating area ( 25°C 100°C 125°C Figure 4. Collector current as a function of ...

Page 5

... COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( =+150° =+25° =-40° GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors SGD02N120 Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP02N120 ...

Page 6

... T , JUNCTION TEMPERATURE j Figure 11. Typical switching times as a function of junction temperature (inductive load 800V +15V/0V 2A dynamic test circuit in Fig.E) Power Semiconductors SGD02N120, 100ns 10ns Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. ...

Page 7

... T , JUNCTION TEMPERATURE j Figure 15. Typical switching energy losses as a function of junction temperature (inductive load 800V +15V/0V 2A dynamic test circuit in Fig.E ) Power Semiconductors SGD02N120, 0.5mJ 0.4mJ 0.3mJ 0.2mJ E 0.1mJ off 0.0mJ Figure 14. Typical switching energy losses as a function of gate resistor ...

Page 8

... GATE EMITTER VOLTAGE GE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V = 1200V, start Power Semiconductors SGD02N120, 100pF U =960V CE 10pF 10nC 15n 0V V Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 40A 30A 20A 10A 0A 14V ...

Page 9

... Power Semiconductors SGD02N120, PG-TO220-3-1 9 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...

Page 10

... Power Semiconductors SGD02N120, PG-TO252-3-11 10 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...

Page 11

... Power Semiconductors SGD02N120, PG-TO262-3-1 (I² Pak) 10 ±0 0...0.3 1) 1.27 8.5 0.05 2.4 C 0...0.15 2.4 1. 0.75 ±0 2.54 0. Typical Metal surface min 7.25 6.9 All metal surfaces tin plated, except area of cut. 11 SGP02N120 SGI02N120 4.4 0.5 ±0.1 Rev. 2.3 Sep. 07 ...

Page 12

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGD02N120, i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF. 12 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...

Page 13

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGD02N120, 13 SGP02N120 SGI02N120 Rev. 2.3 ...

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