IGD01N120H2 Infineon Technologies, IGD01N120H2 Datasheet
IGD01N120H2
Specifications of IGD01N120H2
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IGD01N120H2 Summary of contents
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... J-STD-020 and JESD-022 Power Semiconductors for target applications http://www.infineon.com/igbt Marking off j 0.09mJ G01H1202 150 C G1H1202 0.09mJ 150°C G01H1202 Symbol jmax IGP01N120H2 IGD01N120H2 G PG-TO-252-3-1 PG-TO-220-3-1 Package PG-TO-220-3-1 PG-TO-252-3-11 Value 1200 C E 3.2 1.3 3.5 3 -40...+150 260 260 Rev. 2.4 Sept Unit V A ...
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... PCB is vertical without blown air. Power Semiconductors Symbol Conditions PG-TO-220-3 PG-TO-252-3 Symbol Conditions (one layer thick) copper area for 2 IGP01N120H2 IGD01N120H2 Max. Value Unit 4.5 K Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 Rev. 2.4 Sept. 07 ...
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... C j Symbol Conditions Energy losses include “tail” and diode reverse recovery. Symbol Conditions IGP01N120H2 IGD01N120H2 Value Unit min. Typ. max 6 370 - - 0. 0. 0.14 - Value Unit min. Typ. max 8 450 - - 0. 0. 0.2 - Value Unit min. Typ. max 0. 0.044 - Rev. 2.4 Sept. 07 ...
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... C) j Power Semiconductors 10A 0,1A ,01A 10kHz 100kHz 1V Figure 2. Safe operating area ( 125°C 150°C 25°C Figure 4. Collector current as a function of case temperature ( IGP01N120H2 IGD01N120H2 200 s DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C T ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors =15V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGP01N120H2 IGD01N120H2 12V 10V EMITTER VOLTAGE =0.5A C 0°C 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.4 Sept. 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V 241 , CE G dynamic test circuit in Fig. 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.03mA 241 , 6 IGP01N120H2 IGD01N120H2 t d(off d(on 100 150 200 R , GATE RESISTOR G = 150 +15V/0V 1A max. typ. min. ...
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... Fig.E ) 0.06mJ 0.04mJ 0.02mJ 0.00mJ 100°C 150°C 0V/us Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig 241 , 7 IGP01N120H2 IGD01N120H2 and E include losses on ts due to diode recovery off 50 100 150 200 R , GATE RESISTOR G = 150 C, ...
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... C iss 600V 400V C oss 200V C rss 0V 20V 30V Figure 20. Typical turn off behavior, hard switching (V =15/0V Dynamic test circuit in Figure E) 8 IGP01N120H2 IGD01N120H2 U =240V CE U =960V CE 5nC 10nC Q , GATE CHARGE GE 1.0A 0.8A 0.6A 0.4A 0.2A 0.0A 0.0 0.2 0.4 ...
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... PULSE WIDTH p Figure 21. Typical turn off behavior, soft switching (V =15/0V, R =220Ω 150 Dynamic test circuit in Figure E) Power Semiconductors 1.0A 0.8A 0.6A 0.4A 0.2A 0.0A 1.6 2.0 9 IGP01N120H2 IGD01N120H2 Rev. 2.4 Sept. 07 ...
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... Power Semiconductors PG-TO220-3-1 10 IGP01N120H2 IGD01N120H2 Rev. 2.4 Sept. 07 ...
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... P-TO252-3-11 Power Semiconductors IGP01N120H2 IGD01N120H2 11 Rev. 2.4 Sept. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGP01N120H2 IGD01N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGP01N120H2 IGD01N120H2 13 Rev. 2.4 Sept. 07 ...