IKB10N60T Infineon Technologies, IKB10N60T Datasheet
IKB10N60T
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IKB10N60T Summary of contents
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... CE(sat) 1 for target applications http://www.infineon.com/igbt/ T Marking Code CE(sat),Tj=25°C j,max 1.5V K10T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax F I jmax IKB10N60T Series G PG-TO263-3-2 Package PG-TO263-3-2 Value 600 110 -40...+175 j -55...+175 245 Rev. 2.3 Oct Unit ...
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... Power Semiconductors ® TrenchStop Series Symbol Conditions Footprint 6cm² Cu Symbol Conditions . IKB10N60T p Max. Value Unit 1.35 K/W 1 Value Unit min. typ. max. 600 - - V - 1.5 2. 1.6 2.0 - 1.6 - 4.1 4.6 5.7 µ 1000 - - 100 none Ω - 551 - 100 - A Rev. 2.3 Oct. 07 ...
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... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKB10N60T p Value Unit min. typ. max 215 - - 115 - ns - 0.38 - µ 680 - A/ s Value Unit min. typ. max 233 - - 200 - ns - 0.92 - µ ...
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... Power Semiconductors ® TrenchStop 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 20A 10A 0A 25°C Figure 4. Collector current as a function of 4 IKB10N60T Series t =1µs p 5µs 20µs 100µs 500µs 10ms 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C ...
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... V GE 20A 15A 10A Figure 6. Typical output characteristic 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50° Figure 8. Typical collector-emitter 5 IKB10N60T =20V 15V 12V 10V COLLECTOR EMITTER VOLTAGE ( T = 175°C) j 0°C 50°C 100° JUNCTION TEMPERATURE J saturation voltage as a function of ...
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... Figure 10. Typical switching times 23Ω d(off in -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =23Ω IKB10N60T Series t d(on GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 10A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100° ...
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... Figure 14. Typical switching energy losses = 175°C, = 23Ω, G 0,8m J 0,6m J 0,4m J 0,2m J 0,0m J 150°C 300V Figure 16. Typical switching energy losses = 400V, = 23Ω IKB10N60T Series *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load 175°C, J ...
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... Figure 20. Short circuit withstand time as a function of gate-emitter voltage ( Jmax 8 IKB10N60T C C oss C 10V 20V - EMITTER VOLTAGE =0V MHz) 12V 13V 14V - GATE EMITETR VOLTAGE =600V , start 25°C, J <150°C) Rev. 2.3 Oct. 07 ...
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... T =175°C J 0,5µC 0,4µC 0,3µC T =25°C 0,2µC J 0,1µC 0,0µC 200A/µs 800A/µs Figure 24. Typical reverse recovery charge 9 IKB10N60T Series D =0.5 0 0.3169 4.629*10 0.4734 7.07*10 0.1 0.6662 1.068*10 0.4398 1.253*10 0. 0.02 ...
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... V Dynamic test circuit in Figure E) 2,0V 1,5V 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 10 IKB10N60T T =25° =175°C J 600A/µs 800A/µs /dt , DIODE CURRENT SLOPE =400V, I =10A ...
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... Power Semiconductors ® TrenchStop Series PG-TO263-3-2 11 IKB10N60T p Rev. 2.3 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 12 IKB10N60T =60nH =40pF. Rev. 2.3 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IKB10N60T p Rev. 2.3 Oct. 07 ...