SGP15N60 Infineon Technologies, SGP15N60 Datasheet

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SGP15N60

Manufacturer Part Number
SGP15N60
Description
IGBT NPT 600V 31A 139W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGP15N60

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGP15N60XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGP15N60
Manufacturer:
INFINEON
Quantity:
12 560
Part Number:
SGP15N60
Manufacturer:
Infineon Technologies
Quantity:
135
Part Number:
SGP15N60RUF
Manufacturer:
INFINEON
Quantity:
12 500
Fast IGBT in NPT-technology
SGP15N60
SGW15N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
2
C
C
C
CE
GE
C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 15 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
Type
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
j
off
= 50 V, R
compared to previous generation
150 C
600V, T
600V
600V
V
CE
GE
j
p
= 25
limited by T
2
150 C
15A
15A
1
I
C
for target applications
,
jmax
V
2.3V
2.3V
CE(sat)
150 C
150 C
http://www.infineon.com/igbt/
T
1
j
PG-TO-220-3-1
G15N60
G15N60
Marking
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-247-3
Package
-55...+150
SGW15N60
SGP15N60
Value
600
139
260
31
15
62
62
85
10
20
Rev. 2.3
PG-TO-247-3
G
V
Unit
A
V
mJ
W
C
s
Sep 08
C
E

Related parts for SGP15N60

SGP15N60 Summary of contents

Page 1

... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-220-3-1 for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V G15N60 150 C 2.3V G15N60 150 C Symbol jmax SGP15N60 SGW15N60 G PG-TO-247-3 Package PG-TO-220-3-1 PG-TO-247-3 Value 600 139 -55...+150 260 s Rev. 2 Unit ...

Page 2

... 150 =400 A V 150 =20V =20V, I =15A =25V f=1MHz =15A =15V PG-TO-220-3-1 E PG-TO-247-3- =15V 0V 150 SGP15N60 SGW15N60 Max. Value Unit 0.9 K Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.3 2 2000 - - 100 800 960 101 - 150 - A Rev. 2.3 Sep 08 ...

Page 3

... =150 C j Symbol Conditions T = 150 =15A 80nH Energy losses include E “tail” and diode reverse recovery SGP15N60 SGW15N60 Value Unit min. typ. max 234 281 - 0.30 0. 0.27 0.35 - 0.57 0.71 Value Unit min. typ. max 261 313 - 54 ...

Page 4

... COLLECTOR CE Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 125°C 25°C 50° Figure 4. Collector current as a function of case temperature (V 15V SGP15N60 SGW15N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 75°C 100°C 125°C , CASE TEMPERATURE ...

Page 5

... C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP15N60 SGW15N60 15V 13V 11V EMITTER VOLTAGE I = 30A 15A C 0°C 50°C 100°C 150°C Rev. 2.3 ...

Page 6

... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.4mA SGP15N60 SGW15N60 t d(off d(on GATE RESISTOR G = 150 400V 15A, C max. ...

Page 7

... D=0.5 ts 0.2 0 K/W 0.05 0. K/W 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGP15N60 SGW15N60 and E include losses off GATE RESISTOR G = 150 400V 15A 0.5321 0.04968 -3 0.2047 2.58* ...

Page 8

... GE 250A 200A 150A 100A 50A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGP15N60 SGW15N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...

Page 9

... PG-TO-220-3-1 9 SGP15N60 SGW15N60 Rev. 2.3 Sep 08 ...

Page 10

... SGP15N60 SGW15N60 MAX 0.203 0.099 0.083 Z8B00003327 0.052 0 0.095 0.085 0.133 0.123 0.027 0.831 7.5mm 0.695 0.053 0.631 0.557 0.201 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses SGP15N60 SGW15N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Rev. 2.3 Sep 08 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP15N60 SGW15N60 12 Rev. 2.3 ...

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