SGB15N60 Infineon Technologies, SGB15N60 Datasheet

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SGB15N60

Manufacturer Part Number
SGB15N60
Description
IGBT NPT 600V 31A 139W TO263-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGB15N60

Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGB15N60XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGB15N60
Manufacturer:
INFINEON
Quantity:
12 500
Fast IGBT in NPT-technology
Type
SGP15N60
SGB15N60
SGW15N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
1)
C
C
C
C
CE
GE
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Complete product spectrum and PSpice Models :
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 15 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
j
off
= 50 V, R
compared to previous generation
150 C
600V, T
600V
V
CE
GE
j
p
= 25
limited by T
1)
150 C
15A
I
C
,
jmax
V
2.3V
CE(sat)
SGP15N60,
150 C
http://www.infineon.com/igbt/
T
1
j
P-TO-220-3-1
(TO-220AB)
Package
TO-220AB
TO-263AB
TO-247AC
Symbol
V
I
I
-
V
E
t
P
T
C
C p u l s
S C
j
C E
G E
A S
t o t
, T
s t g
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
G
-55...+150
SGW15N60
Ordering Code
Q67040-S4508
Q67041-A4711
Q67040-S4235
SGB15N60
Value
C
E
600
139
31
15
62
62
85
10
20
P-TO-247-3-1
(TO-247AC)
Unit
V
W
A
V
mJ
C
s
Jul-02

Related parts for SGB15N60

SGB15N60 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. SGP15N60, P-TO-220-3-1 (TO-220AB) http://www.infineon.com/igbt Package C CE(sat) j 2.3V TO-220AB 150 C TO-263AB TO-247AC Symbol jmax SGB15N60 SGW15N60 P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235 Value 600 139 -55...+150 Unit ...

Page 2

... Allowed number of short circuits: <1000; time between short circuits: >1s. SGP15N60, Symbol Conditions TO-220AB TO-247AC R TO-263AB Symbol Conditions (one layer thick) copper area for 2 SGB15N60 SGW15N60 Max. Value Unit 0.9 K Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.3 2 2000 - - 100 800 960 101 - 150 - A Jul-02 ...

Page 3

... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB15N60 SGW15N60 Value Unit min. typ. max 234 281 - 0.30 0. 0.27 0.35 - 0.57 0.71 Value Unit min. typ. max 261 313 - ...

Page 4

... COLLECTOR CE Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 125°C 25°C 50° Figure 4. Collector current as a function of case temperature (V 15V SGB15N60 SGW15N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 75°C 100°C 125°C , CASE TEMPERATURE ...

Page 5

... Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB15N60 SGW15N60 15V 13V 11V EMITTER VOLTAGE I = 30A 15A C 0°C 50°C 100°C 150°C Jul-02 ...

Page 6

... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.4mA SGB15N60 SGW15N60 t d(off d(on GATE RESISTOR G = 150 400V 15A, C max. ...

Page 7

... D=0.5 ts 0.2 0 K/W 0.05 0. K/W 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB15N60 SGW15N60 and E include losses off GATE RESISTOR G = 150 400V 15A 0.5321 0.04968 -3 0.2047 2.58* ...

Page 8

... GE 250A 200A 150A 100A 50A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB15N60 SGW15N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) ...

Page 9

... SGP15N60, TO-220AB 2 TO-263AB (D Pak) SGB15N60 SGW15N60 dimensions symbol [mm] min max A 9.70 10.30 B 14.88 15.95 C 0.65 0.86 D 3.55 3.89 E 2.60 3.00 F 6.00 6.80 G 13.00 14.00 H 4.35 4.75 K 0.38 0.65 L 0.95 1.32 M 2.54 typ. N 4.30 4.50 P 1.17 1.40 T 2.30 2.72 dimensions symbol [mm] ...

Page 10

... SGP15N60, TO-247AC 10 SGB15N60 SGW15N60 dimensions symbol [mm] [inch] min max min A 4.78 5.28 0.1882 B 2.29 2.51 0.0902 C 1.78 2.29 0.0701 D 1.09 1.32 0.0429 E 1.73 2.06 0.0681 F 2.67 3.18 0.1051 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 K 15.65 16.15 0.6161 L 5.21 5.72 0.2051 M 19 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses SGP15N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 11 SGB15N60 SGW15N60 =180nH =250pF. Jul-02 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP15N60, 12 SGB15N60 SGW15N60 Jul-02 ...

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