SKB15N60 Infineon Technologies, SKB15N60 Datasheet
SKB15N60
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SKB15N60 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V K15N60 150 C jmax jmax 1 SKB15N60 G PG-TO263-3-2 Package PG-TO263-3-2 Symbol Value V 600 ...
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... C, unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SKB15N60 Max. Value 0.9 1.7 40 Value min. Typ. max. 600 - = 1.7 2 2.4 - 2.3 2.8 1.2 1.4 1.8 - 1.25 1. 2000 = 100 = 10.9 - 800 960 - 84 101 - 150 10 s Rev. 2.2 Unit K/W Unit - Oct. 07 ...
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... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SKB15N60 Value Unit min. typ. max 234 281 - 0.30 0. 0.27 0.35 - 0.57 0.71 - 279 - 254 - - 390 - 180 - A/ s Value Unit min. typ. max 261 313 - 0.45 0.54 ...
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... V CE Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SKB15N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125°C ...
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... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKB15N60 V =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 30A 15A C 0°C 50°C 100°C 150° ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.4mA SKB15N60 t d(off d(on GATE RESISTOR G = 150 400V 15A, C 0°C 50°C 100° ...
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... K/W 0.05 0. K/W 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKB15N60 *) E and E include losses on ts due to diode recovery GATE RESISTOR G = 150 400V 15A 0.5321 0.04968 -3 0.2047 2.58*10 -4 ...
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... GE 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKB15N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE EMITTER VOLTAGE ...
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... Dynamic test circuit in Figure E) 1000A/ s 800A/ s 600A/ s 400A/ s 200A/ s 0A/ s 900A/ s 100A/ s Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKB15N60 I = 30A 15A 7.5A F 300A/ s 500A/ s 700A/ s 900A DIODE CURRENT SLOPE F ...
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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.0V 1.5V 1.0V 1.5V 2.0V -40°C Figure 26. Typical diode forward voltage as a function of junction temperature , ( 7.83*10 -2 1.21*10 -3 1.36*10 -4 1.53*10 -5 2.50* SKB15N60 I = 30A 15A F 0°C 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2.2 Oct. 07 ...
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... PG-TO263-3-2 11 SKB15N60 Rev. 2.2 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKB15N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Rev. 2.2 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKB15N60 13 Rev. 2.2 Oct. 07 ...