IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet
IKW03N120H2
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IKW03N120H2 Summary of contents
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... J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking C off j 0.15mJ K03H1202 150 C 0.15mJ 150°C K03H1202 Symbol jmax IKP03N120H2 IKW03N120H2 G PG-TO-247-3 PG-TO-220-3-1 Package PG-TO-247-3 PG-TO-220-3-1 Value 1200 C E 9.6 3.9 9.9 9.9 9 -40...+150 260 Rev. 2.5 Sept Unit ...
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... Conditions =300 150 150 A 150 =20V =20V =25V f=1MHz =15V PG- TO- 220- 3-1 E PG-TO-247-3-21 2 IKP03N120H2 IKW03N120H2 Max. Value Unit 2.0 K/W 3.2 62 Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.0 2.5 - 1.75 - 2 100 205 - Rev. 2.5 Sept. 08 ...
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... C j Symbol Conditions 150 =15V/0V 80nH =40pF E Energy losses include “tail” and diode reverse recovery 150 IKP03N120H2 IKW03N120H2 Value Unit min. typ. max 281 - - 0.23 - µ 993 - 1180 - Value Unit min. typ. max 340 - - 0.22 - ...
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... Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Power Semiconductors Symbol Conditions =15V/0V 150 IKP03N120H2 IKW03N120H2 Value Unit min. typ. max 0. 0.09 - Rev. 2.5 Sept. 08 ...
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... V Figure 2. Safe operating area ( 12A 10A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V IKP03N120H2 IKW03N120H2 100 s 500 s DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C 150° ...
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... CE Power Semiconductors 10A COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IKP03N120H2 IKW03N120H2 =15V 12V 10V EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.5 Sept. 08 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IKP03N120H2 IKW03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100°C 150° ...
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... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IKP03N120H2 IKW03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...
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... Figure 17. Typical gate charge (I = 3A) C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 30V Figure 20. Typical turn off behavior, hard switching (V GE Dynamic test circuit in Figure E) 9 IKP03N120H2 IKW03N120H2 U =240V CE U =960V CE 10nC 20nC Q , GATE CHARGE 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ...
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... J 0.4uC 0.3uC T =25°C J 0.2uC 200Ohm 300Ohm 0Ohm Figure 24. Typical reverse recovery charge as a function of diode current slope (V R Dynamic test circuit in Figure E) 10 IKP03N120H2 IKW03N120H2 D=0.5 0 1.9222 7.04E-04 0.02 0.5852 2.02E-04 0.01 0.7168 4.39E-03 R single pulse 1 C ...
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... Dynamic test circuit in Figure E) 3.0V I = 2.0V 1.5V T =25°C J 1.0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IKP03N120H2 IKW03N120H2 T =150° =25°C J 100Ohm 200Ohm R , GATE RESISTANCE G =800V, I =3A, F =2A =1A 0°C 50°C 100°C 150° ...
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... Power Semiconductors PG-TO220-3-1 12 IKP03N120H2 IKW03N120H2 Rev. 2.5 Sept. 08 ...
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... IKP03N120H2 IKW03N120H2 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.5 Sept. 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKP03N120H2 IKW03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKP03N120H2 IKW03N120H2 15 Rev. 2.5 Sept. 08 ...