SKP15N60 Infineon Technologies, SKP15N60 Datasheet

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SKP15N60

Manufacturer Part Number
SKP15N60
Description
IGBT NPT 600V 31A 139W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKP15N60

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKP15N60
Manufacturer:
FSC
Quantity:
5 000
Part Number:
SKP15N60
Manufacturer:
INFINEON
Quantity:
8 000
Part Number:
SKP15N60
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Type
SKP15N60
SKB15N60
SKW15N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
1)
C
C
C
C
C
CE
GE
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Very soft, fast recovery anti-parallel EmCon diode
Complete product spectrum and PSpice Models :
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
CC
j
off
compared to previous generation
150 C
600V, T
600V
V
p
CE
limited by T
j
p
limited by T
1)
150 C
15A
I
C
jmax
jmax
V
2.3V
CE(sat)
SKP15N60,
150 C
http://www.infineon.com/igbt/
T
1
j
P-TO-220-3-1
(TO-220AB)
Package
TO-220AB
TO-263AB
TO-247AC
Symbol
V
I
I
-
I
I
V
t
P
T
C
C p u l s
F
F p u l s
S C
j
C E
G E
t o t
, T
s t g
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
G
-55...+150
SKW15N60
Ordering Code
Q67040-S4251
Q67040-S4252
Q67040-S4243
Value
SKB15N60
600
139
C
E
31
15
62
62
31
15
62
10
20
P-TO-247-3-1
(TO-247AC)
Unit
V
W
A
V
C
s
Jul-02

Related parts for SKP15N60

SKP15N60 Summary of contents

Page 1

... Diode pulsed current, t limited Gate-emitter voltage 1) Short circuit withstand time V = 15V, V 600V, T 150 Power dissipation Operating junction and storage temperature 1) Allowed number of short circuits: <1000; time between short circuits: >1s. SKP15N60, P-TO-220-3-1 (TO-220AB) http://www.infineon.com/igbt Package C CE(sat) j 2.3V TO-220AB 150 C TO-263AB TO-247AC Symbol ...

Page 2

... Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. SKP15N60, Symbol Conditions TO-220AB ...

Page 3

... Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. SKP15N60, = Symbol Conditions ...

Page 4

... T , CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 C) j SKP15N60, 100A 10A 1A 0.1A 1V 100kHz V , COLLECTOR CE Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 125° ...

Page 5

... T =+25°C j -55°C 40A +150°C 35A 30A 25A 20A 15A 10A GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 10V) CE SKP15N60, 50A 45A 40A 35A V =20V GE 30A 25A 20A 15A 10A COLLECTOR CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3 ...

Page 6

... JUNCTION TEMPERATURE j Figure 11. Typical switching times as a function of junction temperature (inductive load 400V 15A Dynamic test circuit in Figure E) SKP15N60, 100ns 10ns 25A 30A 0 Figure 10. Typical switching times as a function of gate resistor (inductive load 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4 ...

Page 7

... T , JUNCTION TEMPERATURE j Figure 15. Typical switching energy losses as a function of junction temperature (inductive load 400V 15A Dynamic test circuit in Figure E) SKP15N60, 1.4mJ due to diode recovery. 1.2mJ 1.0mJ 0.8mJ 0.6mJ off 0.4mJ 0.2mJ 0.0mJ 30A 35A 0 Figure 14 ...

Page 8

... GATE EMITTER VOLTAGE GE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V = 600V, start SKP15N60, 1nF 480V 100pF 10pF 100nC COLLECTOR CE Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE 250A 200A 150A 100A 50A 0A 14V 15V ...

Page 9

... DIODE CURRENT SLOPE F Figure 23. Typical reverse recovery current as a function of diode current slope (V = 200V 125 Dynamic test circuit in Figure E) SKP15N60, 2000nC 1500nC I = 15A 1000nC F 500nC 0nC 900A/ s 100A Figure 22. Typical reverse recovery charge as a function of diode current slope (V ...

Page 10

... K/W 1µs 10µs 100µs 1ms 10ms 100ms t , PULSE WIDTH p Figure 27. Diode transient thermal impedance as a function of pulse width ( SKP15N60, 2.0V 1.5V 1.0V 1.5V 2.0V -40°C T Figure 26. Typical diode forward voltage as a function of junction temperature , ( 7.83*10 -2 1.21*10 -3 1.36*10 -4 1.53*10 -5 2.50*10 ...

Page 11

... SKP15N60, TO-220AB 2 TO-263AB (D Pak) SKB15N60 SKW15N60 dimensions symbol [mm] min max A 9.70 10.30 B 14.88 15.95 C 0.65 0.86 D 3.55 3.89 E 2.60 3.00 F 6.00 6.80 G 13.00 14.00 H 4.35 4.75 K 0.38 0.65 L 0.95 1.32 M 2.54 typ. N 4.30 4.50 P 1.17 1.40 T 2.30 2.72 symbol [mm] min max A 9 ...

Page 12

... SKP15N60, TO-247AC 12 SKB15N60 SKW15N60 dimensions symbol [mm] [inch] min max min A 4.78 5.28 0.1882 B 2.29 2.51 0.0902 C 1.78 2.29 0.0701 D 1.09 1.32 0.0429 E 1.73 2.06 0.0681 F 2.67 3.18 0.1051 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 K 15.65 16.15 0.6161 L 5.21 5.72 0.2051 M 19 ...

Page 13

... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKP15N60, i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 13 SKB15N60 SKW15N60 =180nH =250pF. Jul-02 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKP15N60, 14 SKB15N60 ...

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