IKW25T120 Infineon Technologies, IKW25T120 Datasheet
IKW25T120
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IKW25T120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series ® CE(sat) 1 for target applications http://www.infineon.com/igbt Marking Code CE(sat),Tj=25°C j,max 1.7V K25T120 150 C Symbol jmax jmax IKW25T120 PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 190 W -40...+150 C -55...+150 Rev. 2.1 May 06 ...
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... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors ® TrenchStop Series - 2 IKW25T120 260 Rev. 2.1 May 06 ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series Symbol Conditions Symbol Conditions IKW25T120 Max. Value Unit 0.65 K/W 1.0 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.7 2 1.7 - 5.0 5 600 Ω - 1860 - 155 - 150 - A Rev. 2.1 May 06 ...
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... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series = Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW25T120 Value Unit min. typ. max 560 - - 200 - ns - 2.3 µ 390 - A/ s Rev. 2.1 May 06 ...
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... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW25T120 Value Unit min. typ. max 660 - - 130 - - 320 - ns - 5.2 - µ 320 A/ s Rev. 2.1 May 06 ...
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... TrenchStop Series 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 600V 40A 30A 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 6 IKW25T120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° ...
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... COLLECTOR CE Figure 6. Typical output characteristic (T j 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 10V 12V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V 7 IKW25T120 EMITTER VOLTAGE = 150°C) I =50A C I =25A C I =15A C I =8A C 0°C 50°C 100°C ...
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... Figure 10. Typical switching times as a =22Ω 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as =600V, =22Ω IKW25T120 R , GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =25A Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C ...
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... E 4mJ 3mJ E 2mJ E 1mJ 0mJ 150°C 400V V Figure 16. Typical switching energy losses =600V, =22Ω IKW25T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =25A ...
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... TrenchStop Series 1nF 100pF 10pF 0V 150nC 200nC V Figure 18. Typical capacitance as a function 200A 150A 100A 50A 0A 16V 12V Figure 20. Typical short circuit collector =25° IKW25T120 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V GATE EMITTETR VOLTAGE ...
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... K K/W -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.52* K/W 10ms 100ms 10µs Figure 24. Diode transient thermal 11 IKW25T120 0.5us 1us 1.5us t, TIME (V =15/0V, R =22Ω 150 Dynamic test circuit in Figure E) D=0.5 0.2 0 0.282 1.01*10 0.05 0.317 1.15*10 0.294 1.30*10 0.107 1.53*10 0. 0.01 single pulse ...
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... F Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V Dynamic test circuit in Figure E) 12 IKW25T120 T =150° =25°C J 600A/µs 800A/µs 1000A/µs /dt, DIODE CURRENT SLOPE =600V, I ...
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... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series 2,0V I =50A F 25A 1,5V 15A 8A 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 13 IKW25T120 0°C 50°C 100°C , JUNCTION TEMPERATURE J Rev. 2.1 May 06 ...
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... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 14 IKW25T120 Rev. 2.1 May 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 15 IKW25T120 =180nH =39pF. Rev. 2.1 May 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 16 IKW25T120 Rev. 2.1 May 06 ...