IKW40N120T2 Infineon Technologies, IKW40N120T2 Datasheet

IGBT 1200V 75A 480W TO247-3

IKW40N120T2

Manufacturer Part Number
IKW40N120T2
Description
IGBT 1200V 75A 480W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW40N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
480W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
480W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW40N120T2
Manufacturer:
INFINEON
Quantity:
12 000
Part Number:
IKW40N120T2
Manufacturer:
INFINEO48
Quantity:
840
Part Number:
IKW40N120T2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW40N120T2
0
Company:
Part Number:
IKW40N120T2
Quantity:
3 600
Company:
Part Number:
IKW40N120T2
Quantity:
4
Company:
Part Number:
IKW40N120T2FKSA1
Quantity:
2 400
Low Loss DuoPack :
Type
IKW40N120T2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current (T
T
T
Pulsed collector current, t
Turn off safe operating area
V
DC Diode forward current (T
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
1
2
3)
Power Semiconductors
C
C
C
C
C
J-STD-020 and JESD-022
Limited by bond wire
CE
GE
Allowed number of short circuits:
= 25 C
= 110 C
= 25 C
= 110 C
= 25 C
Best in class TO247
Short circuit withstand time – 10 s
Designed for :
TrenchStop
Easy paralleling capability due to positive temperature coefficient in
V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
= 15V, V
CE(sat)
1200V, T
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CC
j
®
600V, T
175 C
2
1200V
nd
V
CE
generation for 1200 V applications offers :
j
p
=150°C)
limited by T
j,start
p
limited by T
3)
40A
j
=150°C)
I
C
IGBT in 2
with soft, fast recovery anti-parallel EmCon diode
175 C
1
for target applications
jmax
V
<1000; time between short circuits: >1s.
CE(sat),Tj=25°C
jmax
1.75V
nd
generation TrenchStop
TrenchStop
175 C
1
T
j,max
Marking Code
®
K40T1202
2
nd
Symbol
V
I
I
-
I
I
V
t
P
T
T
-
C
C p u l s
F
F p u l s
S C
Generation Series
j
s t g
C E
G E
t o t
®
PG-TO-247-3
IKW40N120T2
Package
-40...+175
-55...+150
Value
1200
160
160
160
480
260
75
75
40
40
10
20
2
2
Rev. 2.2
PG-TO-247-3
G
V
Unit
A
V
W
C
s
Sep 08
C
E

Related parts for IKW40N120T2

IKW40N120T2 Summary of contents

Page 1

... V T Marking Code CE(sat),Tj=25°C j,max 1.75V K40T1202 175 C Symbol jmax jmax <1000; time between short circuits: >1s. 1 IKW40N120T2 ® PG-TO-247-3 Package PG-TO-247-3 Value Unit 1200 160 160 160 480 W -40...+175 C -55...+150 260 Rev. 2.2 Sep 08 ...

Page 2

... Gate-emitter leakage current Transconductance Power Semiconductors ® nd TrenchStop 2 Generation Series Symbol Conditions Symbol Conditions µ IKW40N120T2 Max. Value Unit 0.31 K/W 0.53 40 Value Unit min. typ. max. 1200 - - V - 1.75 2 1.75 2 1.80 - 5.2 5 200 Rev. 2.2 Sep 08 ...

Page 3

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® nd TrenchStop 2 Generation Series = Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW40N120T2 - 2360 - pF - 230 - - 125 - - 192 - 220 156 Value Unit min. typ. max 314 - - 258 - ns - 3.3 µ 350 - A/ s Rev. 2.2 Sep 08 ...

Page 4

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® nd TrenchStop 2 Generation Series =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW40N120T2 Value Unit min. typ. max 405 - - 195 - - 480 - ns - 6.6 - µ 200 A/ s Rev. 2.2 Sep 08 ...

Page 5

... V Figure 2. = 600V, CE 70A 60A 50A 40A 30A 20A 10A 0A 25°C 125°C 150°C Figure 4. 5 IKW40N120T2 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE CE Safe operating area ( 175 C;V =15V 75°C 125° CASE TEMPERATURE C ...

Page 6

... Generation Series 150A 125A V 100A 75A 50A 25A Figure 6. 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 10V 12V -50°C Figure 8. 6 IKW40N120T2 20V =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE CE Typical output characteristic (T = 175°C) j 0°C 50°C 100°C T ...

Page 7

... Figure 10. Typical switching times as a =600V, CE 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 100°C 150°C Figure 12. Gate-emitter threshold voltage as a =600V, V =0/15V IKW40N120T2 Generation Series t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =175°C, V =600V, J ...

Page 8

... E off 5.0mJ 2.5mJ 0.0mJ 100°C 150°C 400V Figure 16. Typical switching energy losses as =600V, V =0/15V IKW40N120T2 Generation Series *) E and E include losses on ts due to diode recovery R , GATE RESISTOR G function of gate resistor (inductive load, T =175°C, V =600V =0/15V, I =40A, ...

Page 9

... TrenchStop 2 Generation Series 1nF 960V 100pF 0V 150nC V Figure 18. Typical capacitance as a function of 300A 200A 100A 0A 18V 12V Figure 20. Typical short circuit collector 175° IKW40N120T2 10V 20V , - COLLECTOR EMITTER VOLTAGE CE collector-emitter voltage (V =0V MHz) GE 14V 16V 18V GATE EMITTETR VOLTAGE GE current as a function of gate-emitter ...

Page 10

... K K/W 10ms 100ms 10µs Figure 24. Diode transient thermal impedance 10 IKW40N120T2 0.8us 1.2us 0.4us t, TIME (V =15/0V, R =12Ω 175 Dynamic test circuit in Figure E) D=0.5 0.2 0 0.112 2.80*10 0.05 0.163 3.27*10 0.02 0.234 1.71*10 0.015 2.68*10 0.01 single pulse ...

Page 11

... Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V Dynamic test circuit in Figure E) 11 IKW40N120T2 T =175° =25°C J 800A/µs 1200A/µs 1600A/µs /dt, DIODE CURRENT SLOPE ...

Page 12

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® nd TrenchStop 2 Generation Series 2.5V I =80A F 2.0V 40A 1.5V 20A 8A 1.0V 0.5V 0.0V 3V 0° JUNCTION TEMPERATURE J Figure 28. Typical diode forward voltage as a function of junction temperature 12 IKW40N120T2 50°C 100°C 150°C Rev. 2.2 Sep 08 ...

Page 13

... IKW40N120T2 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.2 Sep 08 ...

Page 14

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® nd TrenchStop 2 Generation Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 14 IKW40N120T2 Rev. 2.2 Sep 08 ...

Page 15

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® nd TrenchStop 2 Generation Series 15 IKW40N120T2 Rev. 2.2 Sep 08 ...

Related keywords