SGP30N60 Infineon Technologies, SGP30N60 Datasheet

IGBT 600V 30A TO-263

SGP30N60

Manufacturer Part Number
SGP30N60
Description
IGBT 600V 30A TO-263
Manufacturer
Infineon Technologies
Datasheets

Specifications of SGP30N60

Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
41A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
41 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
41.0 A
Ic(max) @ 100°
30.0 A
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
SGP30N60IN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGP30N60
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SGP30N60HS
Manufacturer:
FAIRCHIL
Quantity:
12 500
Fast IGBT in NPT-technology
• 75% lower E
• Short circuit withstand time – 10 µs
• Designed for:
• NPT-Technology for 600V applications offers:
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models :
SGP30N60
SGW30N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
2
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 30 A, V
= 25°C
= 100°C
= 25°C
≤ 600V, T
= 15V, V
Type
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25°C
CC
CC
j
off
= 50 V, R
≤ 150°C
≤ 600V, T
compared to previous generation
600V
600V
V
CE
GE
j
p
≤ 150°C
= 25 Ω,
limited by T
2
30A
30A
1
I
C
for target applications
jmax
V
2.5V
2.5V
CE(sat)
http://www.infineon.com/igbt/
150°C
150°C
T
1
j
Marking
G30N60
G30N60
V
I
I
-
V
E
t
P
T
T
Symbol
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-220-3-1
PG-TO-247-3
Package
-55...+150
SGW30N60
SGP30N60
Value
600
112
112
±20
165
250
260
41
30
10
Rev. 2.5
PG-TO-247-3
G
Unit
V
A
V
mJ
µs
W
°C
Nov. 09
C
E

Related parts for SGP30N60

SGP30N60 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-220-3-1 http://www.infineon.com/igbt Marking CE(sat) j 2.5V G30N60 PG-TO-220-3-1 150°C 2.5V G30N60 150°C Symbol jmax SGP30N60 SGW30N60 PG-TO-247-3 Package PG-TO-247-3 Value Unit 600 112 112 ±20 V 165 mJ µs 10 250 W -55...+150 °C 260 Rev. 2.5 Nov. 09 ...

Page 2

... 20V 30A 25V 0V 80V 30A PG-TO-220-3-1 E PG-TO-247-3-21 I ≤10µ 5V ≤ 600V ≤ 150° SGP30N60 SGW30N60 Max. Value Unit 0.5 K Value Unit min. Typ. max. 600 - - V 1.7 2.1 2.4 - 2.5 3 µ 3000 - - 100 1600 1920 pF - 150 180 - 92 110 - 140 182 ...

Page 3

... 00V 30A 11Ω σ σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ 3 SGP30N60 SGW30N60 Value Unit min. typ. max 291 349 - 0.64 0. 0.65 0.85 - 1.29 1.62 Value Unit min. typ. max ...

Page 4

... Limited by bond wire 40A 30A 20A 10A 0A 125°C 25°C 50° CASE TEMPERATURE C Figure 4. Collector current as a function of case temperature ≤ 15V, T ≤ 150° SGP30N60 SGW30N60 t =4 µ µ µ s 200 µ s 1ms DC 100V 1000V - EMITTER VOLTAGE ≤ 150°C) j 75° ...

Page 5

... Figure 6. Typical output characteristics (T = 150°C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C 0° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP30N60 SGW30N60 EMITTER VOLTAGE I = 60A 30A C 50°C 100°C 150°C Rev. 2.5 Nov. 09 ...

Page 6

... GE C Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50° JUNCTION TEMPERATURE j Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.7mA SGP30N60 SGW30N60 t d(off d(on Ω 30 Ω 40 Ω , GATE RESISTOR = 150° 400V 30A, max. ...

Page 7

... E * 0. K/W 0. K/W off single pulse -4 10 K/W 1µs 10µs 150° Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGP30N60 SGW30N60 include losses off Ω 30 Ω 40 Ω , GATE RESISTOR = 150° 400V 30A, τ 0.3681 0.0555 -3 0.0938 1.26* ...

Page 8

... V , GATE GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage ≤ 600V 150° SGP30N60 SGW30N60 C iss C oss C rss 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V - EMITTER VOLTAGE Rev. 2.5 Nov. 09 ...

Page 9

... PG-TO-220-3-1 9 SGP30N60 SGW30N60 Rev. 2.5 Nov. 09 ...

Page 10

... SGP30N60 SGW30N60 10 Rev. 2.5 Nov. 09 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses SGP30N60 SGW30N60 τ τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity C 11 τ =180nH σ =900pF. σ Rev. 2.5 Nov. 09 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP30N60 SGW30N60 12 Rev. 2.5 ...

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