STS4DPF30L STMicroelectronics, STS4DPF30L Datasheet - Page 2

• Manufacturer Part Number: STS4DPF30L
• Description: MOSFET 2P-CH 30V 4A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS4DPF30L

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3228-2

STS4DPF30L
THERMAL DATA
(*)
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/6
When Mounted on 1 inch
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
C
DS(on)
C
GS(th)
C
T
GSS
DSS
fs (*)
T
stg
oss
rss
iss
j
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(*)Thermal Resistance Junction-ambient
Thermal Operating Junction-ambient
Storage Temperature
2
Parameter
Parameter
Parameter
FR-4 board, 2 oz of Cu and t
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
DS
DS
= 250 µA, V
[
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 15V
10 sec.
= Max Rating
= Max Rating T
= V
= 25V, f = 1 MHz, V
= ± 16 V
= 10 V
= 4.5 V
Test Conditions
Test Conditions
Test Conditions
GS
Single Operation
Dual Operating
GS
I
I
= 0
D
D
I
I
D
D
= 2 A
= 2 A
C
= 250 µA
= 2 A
= 125°C
GS
= 0
Min.
Min.
Min.
30
1
-55 to 150
-55 to150
0.070
0.085
1350
62.5
Typ.
Typ.
Typ.
490
130
78
10
Max.
±100
Max.
Max.
0.08
0.10
10
1
°C/W
°C/W
Unit
Unit
Unit
°C
°C
µA
µA
nA
pF
pF
pF
V
V
S