BSO350N03 Infineon Technologies, BSO350N03 Datasheet - Page 6

• Manufacturer Part Number: BSO350N03
• Description: MOSFET N-CHAN 30V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO350N03

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 6µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO350N03; BSO350N03INTR; BSO350N03NT; BSO350N03XT; SP000080984

Rev. 1.6
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
60
50
40
30
20
10
3
2
DS
=f(T
0
1000
100
0
-60
10
); V
j
); I
GS
D
-20
=0 V; f =1 MHz
5
=6 A; V
10
20
98 %
GS
=10 V
V
Coss
T
Ciss
DS
Crss
j
15
60
[°C]
typ
[V]
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
0.2
=V
DS
0.4
20
6 µA
V
T
SD
j
0.6
60
[°C]
60 µA
[V]
100
0.8
150 °C
BSO350N03
25 °C, 98%
150 °C, 98 %
140
1.0
25 °C
2008-01-16
180
1.2