BSO211P Infineon Technologies, BSO211P Datasheet
BSO211P
Specifications of BSO211P
Available stocks
Related parts for BSO211P
BSO211P Summary of contents
Page 1
... V =-16V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot Page 1 BSO211P Product Summary V - DS(on Top View SIS00070 Value -4.7 -3 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO211P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - -0.6 -0 ...
Page 3
... R =6Ω d(off =-15V, I =-4. =-15V, I =-4.7A -4. (plateau) V =-15V, I =-4. =25° = =-10V /dt=100A/µ Page 3 BSO211P Values Unit min. typ. max. 6.4 12 690 920 pF - 261 391 - 214 321 - 7 26.3 39 5.6 8.1 - 15.9 23 -18.8 - -0.93 -1 24.3 30 ...
Page 4
... Rev.1.2 2 Drain current parameter: |V -5.5 A -4.5 -3.5 -2.5 -1.5 -0.5 °C 100 120 160 Transient thermal impedance Z thJS parameter : K 41.0µs 10 100 µ - Page |≥ 4 BSO211P - 100 = BSO211P single pulse - BSO211P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2002-01-22 ...
Page 5
... Typ. drain-source on resistance R DS(on) parameter: V Ω Vgs = -3.5V 0.08 0.07 0.06 Vgs = -3V 0.05 0.04 0.03 0.02 Vgs = -2.5V 0. Typ. forward transconductance | f(I DS(on)max fs parameter µ Page 0.1 Vgs = -2.5V Vgs = - =25° BSO211P Vgs= - 3.5V Vgs Vgs = - 4.5V Vgs = - 5V Vgs Vgs = - 2002-01-22 ...
Page 6
... GS(th) parameter -4.5 V 1.6 V 1.2 1 0.8 0.6 0.4 0.2 0 °C 100 160 - Forward character. of reverse diode parameter - -10 0 - Page 98% typ 100 ) µs p BSO211P °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 2002-01-22 BSO211P °C 160 ...
Page 7
... Drain-source breakdown voltage (BR)DSS j BSO211P -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge |V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -4.7 A pulsed 0.2 VDS max. 0.5 VDS max. 7 0.8 VDS max BSO211P Gate | 2002-01-22 ...
Page 8
... Rev.1.2 Page 8 BSO211P 2002-01-22 ...