SI1555DL-T1-E3 Vishay, SI1555DL-T1-E3 Datasheet

MOSFET N/P-CH 20/8V SC70-6

SI1555DL-T1-E3

Manufacturer Part Number
SI1555DL-T1-E3
Description
MOSFET N/P-CH 20/8V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1555DL-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V, 8V
Current - Continuous Drain (id) @ 25° C
660mA, 570mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V @ N Channel or 8 V @ P Channel
Gate-source Breakdown Voltage
+/- 12 V @ N Channel or +/- 8 V @ P Channel
Continuous Drain Current
0.66 A @ N Channel or 0.57 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
320mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1555DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1555DL-T1-E3
Manufacturer:
OKI
Quantity:
120
Part Number:
SI1555DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
44 849
Part Number:
SI1555DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1555DL-T1-E3
Quantity:
70 000
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71079
S10-1054-Rev. E, 03-May-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
V
DS
- 8
20
(V)
Complementary Low-Threshold MOSFET Pair
0.600 at V
0.850 at V
1.200 at V
J
a
0.385 at V
0.630 at V
G
D
Ordering Information: Si1555DL-T1-E3 (Lead (Pb)-free)
S
= 150 °C)
a
1
1
2
R
DS(on)
1
2
3
SC-70 (6-LEADS)
GS
GS
GS
GS
GS
a
SOT-363
Top View
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
= 4.5 V
= 2.5 V
Steady State
Steady State
a
T
T
T
T
A
A
A
A
t ≤ 5 s
Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
6
5
4
= 25 °C, unless otherwise noted
I
- 0.60
- 0.50
- 0.42
D
0.70
0.54
D
G
S
(A)
2
1
2
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
thJA
thJF
I
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Definition
± 0.70
± 0.50
0.25
0.30
0.16
5 s
Marking Code
N-Channel
RB XX
Typical
± 12
360
400
300
20
Steady State
®
Part # Code
± 0.66
± 0.48
Power MOSFET
0.23
0.27
0.14
Lot Traceability
and Date Code
- 55 to 150
± 1.0
- 0.60
- 0.43
- 0.25
0.30
0.16
5 s
P-Channel
Maximum
Vishay Siliconix
415
460
350
± 8
- 8
Steady State
- 0.57
- 0.41
- 0.23
Si1555DL
0.27
0.14
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1555DL-T1-E3

SI1555DL-T1-E3 Summary of contents

Page 1

... GS 1.200 SC-70 (6-LEADS Ordering Information: Si1555DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1555DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 71079 S10-1054-Rev. E, 03-May- 1 2.0 2.5 3.0 100 0.6 0.8 1.0 0.6 0.8 Si1555DL Vishay Siliconix 1.0 0.8 0.6 0 125 °C C 0.2 25 ° °C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si1555DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.2 0.1 I 0.0 - 0.1 - 0.2 - 0 Junction Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 5

... On-Resistance vs. Drain Current Document Number: 71079 S10-1054-Rev. E, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2.0 2 0.6 0.8 1.0 Si1555DL Vishay Siliconix - 1 °C C 0.8 25 °C 125 °C 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS ...

Page 6

... Si1555DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0. 0.0 0.2 0.4 0.6 0 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 I 0.2 0.1 0.0 - 0 Junction Temperature (°C) ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71079. Document Number: 71079 S10-1054-Rev. E, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1555DL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 400 ° ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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