SI1555DL-T1-E3 Vishay, SI1555DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1555DL-T1-E3
• Description: MOSFET N/P-CH 20/8V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1555DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 660mA, 570mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.66 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1555DL-T1-E3TR

Si1555DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.0
0.1
0.01
1
0.1
- 50
0.0
2
1
10
-4
0.2
0.05
Duty Cycle = 0.5
0.02
Source-Drain Diode Forward Voltage
- 25
0.1
0.2
V
SD
T
0
J
T
Single Pulse
- Junction Temperature (°C)
J
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
= 150 °C
25
10
-3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.8
T
J
100
= 25 °C
10
-2
1.0
125
150
Square Wave Pulse Duration (s)
1.2
10
-1
1.0
0.8
0.6
0.4
0.2
0.0
1
5
4
3
2
1
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
-2
1
V
GS
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
Single Pulse Power
0
P
DM
-1
JM
2
− T
Time (s)
t
1
A
S10-1054-Rev. E, 03-May-10
= P
t
2
1
Document Number: 71079
DM
Z
I
3
thJA
D
thJA
100
t
t
1
2
= 0.66 A
(t)
10
= 400 °C/W
4
100
6
0
0
600
5