SI1555DL-T1-E3 Vishay, SI1555DL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1555DL-T1-E3
• Description: MOSFET N/P-CH 20/8V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1555DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 660mA, 570mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.66 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1555DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71079
S10-1054-Rev. E, 03-May-10
V
GS
= 5 V thru 2.5 V
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
0.0
0.0
2
1
10
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
On-Resistance vs. Drain Current
0.5
0.2
V
Single Pulse
DS
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
0.4
V
GS
= 1.8 V
1.5
10
-3
1.5 V
2 V
0.6
Normalized Thermal Transient Impedance, Junction-to-Foot
2.0
1 V
V
V
GS
GS
0.8
= 2.5 V
= 4.5 V
2.5
Square Wave Pulse Duration (s)
10
1.0
3.0
-2
160
120
10
1.0
0.8
0.6
0.4
0.2
0.0
80
40
0
-1
0.0
0
C
0.5
rss
V
V
Transfer Characteristics
DS
GS
2
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
Capacitance
1.0
1
T
25 °C
C
C
4
Vishay Siliconix
iss
= - 55 °C
1.5
Si1555DL
www.vishay.com
6
125 °C
2.0
1
0
2.5
8
5