SI1555DL-T1-E3 Vishay, SI1555DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1555DL-T1-E3
• Description: MOSFET N/P-CH 20/8V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1555DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 660mA, 570mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.66 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1555DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71079
S10-1054-Rev. E, 03-May-10
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
= 0.66 A
0.5
On-Resistance vs. Drain Current
= 10 V
0.2
V
V
DS
0.2
Output Characteristics
GS
Q
V
- Drain-to-Source Voltage (V)
g
1.0
GS
= 5 V thru 2.5 V
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
= 2.5 V
0.4
1.5
0.4
0.6
2.0
V
2 V
GS
0.6
1.5 V
0.8
= 4.5 V
2.5
1 V
3.0
1.0
0.8
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 0.66 A
0.5
= 4.5 V
4
V
V
DS
GS
T
Transfer Characteristics
0
C
J
- Drain-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25 °C
C
Capacitance
25
1.0
8
iss
T
C
= 125 °C
50
Vishay Siliconix
1.5
12
75
Si1555DL
- 55 °C
100
www.vishay.com
2.0
16
125
2.5
20
150
3