IRF7755TRPBF

Manufacturer Part NumberIRF7755TRPBF
DescriptionMOSFET P-CH DUAL 20V 3.9A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7755TRPBF datasheet
 

Specifications of IRF7755TRPBF

Package / Case8-TSSOPMounting TypeSurface Mount
Power - Max1WFet Type2 P-Channel (Dual)
Gate Charge (qg) @ Vgs17nC @ 4.5VVgs(th) (max) @ Id1.2V @ 250µA
Current - Continuous Drain (id) @ 25° C3.9ADrain To Source Voltage (vdss)20V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs51 mOhm @ 3.7A, 4.5V
ConfigurationDualTransistor PolarityDual P-Channel
Drain-source Breakdown Voltage- 20 VGate-source Breakdown Voltage20 V
Continuous Drain Current- 3.9 APower Dissipation1 W
Mounting StyleSMD/SMTGate Charge Qg11 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
provides thedesigner
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
, T
Junction and Storage Temperature Range
J
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
V
R
DSS
DS(on)
-20V
51m @V
86m @V
8
1
7
2
6
3
5
4
1 = D1
8 = D2
2 = S1
7 = S2
3 = S1
6 = S2
4 = G1
5 = G2
@ -4.5V
GS
@ -4.5V
GS
-55 to +150
Max.
125
PD -93995A
IRF7755
®
Power MOSFET
max
I
D
= -4.5V
3.7A
-
GS
= -2.5V
2.8A
-
GS
TSSOP-8
Max.
Units
-20
V
-3.9
-3.1
A
-15
1
W
0.64
W
0.01
W/°C
±20
V
°C
Units
°C/W
1
4/9/01

IRF7755TRPBF Summary of contents

  • Page 1

    ... Low Profile (< 1.2mm) Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

  • Page 2

    IRF7755 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 C ° J ° ...

  • Page 4

    IRF7755 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

  • Page 6

    IRF7755 0.160 0.120 0.080 -3.7A 0.040 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig ...

  • Page 7

    TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel 8 mm www.irf.com DAT E CODE (YW) T ...

  • Page 8

    IRF7755 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards ...