IRF7754TRPBF

Manufacturer Part NumberIRF7754TRPBF
DescriptionMOSFET P-CH DUAL 12V 5.5A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7754TRPBF datasheet
 


Specifications of IRF7754TRPBF

Package / Case8-TSSOPMounting TypeSurface Mount
Power - Max1WFet Type2 P-Channel (Dual)
Gate Charge (qg) @ Vgs22nC @ 4.5VVgs(th) (max) @ Id900mV @ 250µA
Current - Continuous Drain (id) @ 25° C5.5ADrain To Source Voltage (vdss)12V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs25 mOhm @ 5.4A, 4.5V
ConfigurationDualTransistor PolarityDual P-Channel
Drain-source Breakdown Voltage- 12 VGate-source Breakdown Voltage8 V
Continuous Drain Current- 5.5 APower Dissipation1 W
Mounting StyleSMD/SMTGate Charge Qg22 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Ultra Low On-Resistance
l
l
P-Channel MOSFET
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
l
Available in Tape & Reel
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
provides thedesigner
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
, T
Junction and Storage Temperature Range
J
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
V
DSS
-12V
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
@ -4.5V
GS
@ -4.5V
GS

ƒ
ƒ
ƒ
PD - 94224
IRF7754
®
Power MOSFET
R
max
I
DS(on)
D
25m @V
= -4.5V
5.4A
-
GS
34m @V
= -2.5V
4.6A
-
GS
49m @V
= -1.8V
3.9A
-
GS
8
7
6
5
8 = D2
7 = S2
6 = S2
TSSOP-8
5 = G2
Max.
Units
-12
V
-5.5
-4.4
A
-22
1
W
0.64
W
0.01
W/°C
±8
V
-55 to +150
°C
Max.
Units
125
°C/W
1
05/14/01

IRF7754TRPBF Summary of contents

  • Page 1

    ... Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

  • Page 2

    IRF7754 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100  ° 150 ...

  • Page 4

    IRF7754 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0. SINGLE ...

  • Page 6

    IRF7754 0.070 0.060 0.050 0.040 -5.5A 0.030 0.020 0.010 0.0 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...

  • Page 7

    Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 ...

  • Page 8

    IRF7754 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel DAT E CODE (YW) ...

  • Page 9

    TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can ...