IRF7754GTRPBF International Rectifier, IRF7754GTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7754GTRPBF
• Description: MOSFET P-CH DUAL 12V 5.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7754GTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1984pF @ 6V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7754GTRPBFTR

IRF7754GPbF
6
0.070
0.060
0.050
0.040
0.030
0.020
0.010
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
0.0
G
Q
1.0
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
3.0
I D = -5.5A
4.0
5.0
6.0
7.0
0.08
0.06
0.04
0.02
0.1
Fig 13. Typical On-Resistance Vs.
0
Fig 14b. Gate Charge Test Circuit
0.0
12V
V
GS
Same Type as D.U.T.
Current Regulator
5.0
.2µF
V GS = -1.8V
Drain Current
-ID , Drain Current ( A )
50KΩ
-3mA
Current Sampling Resistors
10.0
.3µF
V GS = -4.5V
I
G
15.0
V GS = -2.5V
D.U.T.
www.irf.com
I
D
20.0
+
-
V
DS
25.0