UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet
UPA1792G-E2-AT
Specifications of UPA1792G-E2-AT
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UPA1792G-E2-AT Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1792 is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES Low on-state resistance N-channel MAX. (V DS(on)1 R ...
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ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...
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ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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P-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...
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TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING ...
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FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 125˚C A 75˚C 1 25˚C 25˚ 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 4 100 150 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 ...
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P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...
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FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚C A 75˚C 1 0.1 25˚C 25˚C 0. 0.001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 4 100 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE ...
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The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...