UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet - Page 3

• Manufacturer Part Number: UPA1792G-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1792G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. G14557EJ3V0DS00 (3rd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application of HDD and so
on.
ORDERING INFORMATION
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
Low input capacitance
N-channel C
P-channel C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
The PA1792 is N- and P-channel MOS Field Effect
Low on-state resistance
N-channel R
P-channel R
PART NUMBER
PA1792G
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
R
R
R
R
DS(on)1
DS(on)2
DS(on)3
DS(on)1
DS(on)2
DS(on)3
iss
iss
= 760 pF TYP.
= 900 pF TYP.
= 36 m MAX. (V
= 54 m MAX. (V
= 65 m MAX. (V
= 26 m
= 36 m
= 42 m
N- AND P-CHANNEL POWER MOS FET
MAX. (V
MAX. (V
MAX. (V
Power SOP8
PACKAGE
GS
GS
GS
The mark
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 10 V, I
= 4.5 V, I
= 4.0 V, I
DATA SHEET
SWITCHING
D
shows major revised points.
D
D
D
D
D
= 3.4 A)
= 2.9 A)
= 3.4 A)
= 3.4 A)
= 2.9 A)
= 2.9 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-channel
8
1
Source
Drain
PACKAGE DRAWING (Unit: mm)
5.37 Max.
EQUIVALENT CIRCUIT
0.40
1.27
Body
Diode
+0.10
–0.05
0.78 Max.
5
4
0.12 M
N-channel
P-channel
Gate
Gate
Protection
Diode
PA1792
0.5 ±0.2
6.0 ±0.3
P-channel
1
2
7, 8
3
4
5, 6
4.4
: Source 1
: Gate 1
: Drain 1
: Source 2
: Gate 2
: Drain 2
Source
Drain
1999, 2000
Body
Diode
0.8
0.10