UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet - Page 7

• Manufacturer Part Number: UPA1792G-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1792G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
(1) N-channel
0.01
100
100
0.1
10
80
60
40
20
0
1
0.1
FORWARD BIAS SAFE OPERATING AREA
0
Single pulse, 1 unit,
Mounted on ceramic substrate of
2000 mm
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
V
T
DS
A
I
D(DC)
2
- Drain to Source Voltage - V
40
- Ambient Temperature - ˚C
x 1.6 mm
1000
0.01
100
0.1
10
1
100
1
60
I
D(pulse)
80
100 120 140 160
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
A
= 25°C)
10 m
100
Data Sheet G14557EJ3V0DS
PW - Pulse Width - s
100 m
1
Single pulse, 1 unit,
Mounted on ceramic
substrate of 2000 mm
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
0
2 units
1 unit
20
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
40
- Ambient Temperature - ˚C
100
2
x 1.6 mm
60
1000
80 100 120 140 160
R
Mounted on ceramic
substrate of
2000 mm
th(ch-A)
= 73.5˚C/W
2
x 1.6 mm
PA1792
5