MOSFET 2N-CH 30V 2.4A MICRO8

IRF7503TR

Manufacturer Part NumberIRF7503TR
DescriptionMOSFET 2N-CH 30V 2.4A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7503TR datasheet
 

Specifications of IRF7503TR

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs135 mOhm @ 1.7A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C2.4AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds210pF @ 25V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF7503TR
IRF7503
IRF7503CT
  
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Next
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
S 1
2
G 1
3
S 2
4
G 2
T o p V iew
@ 10V
GS
@ 10V
GS
Typ.
–––
PD - 9.1266G
IRF7503
®
HEXFET
Power MOSFET
8
D 1
V
= 30V
DSS
7
D 1
6
D 2
5
R
= 0.135
D 2
DS(on)
Micro8
Max.
Units
2.4
1.9
A
14
1.25
W
10
mW/°C
± 20
V
5.0
V/ns
-55 to + 150
°C
Max.
Units
100
°C/W
8/25/97

IRF7503TR Summary of contents

  • Page 1

    ... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRF7503 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3. µ LSE W IDTH ° ...

  • Page 4

    IRF7503 ...

  • Page 5

    Q G 10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig ...

  • Page 6

    IRF7503 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as ...

  • Page 7

    Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...

  • Page 8

    IRF7503 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...