IRF7503TR International Rectifier, IRF7503TR Datasheet - Page 5

• Manufacturer Part Number: IRF7503TR
• Description: MOSFET 2N-CH 30V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7503TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7503TR; IRF7503; IRF7503CT

Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
1000
100
12V
10V
0.1
10
0.00001
V
1
V
GS
G
D = 0.50
Same Type as D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Current Regulator
0.20
0.10
0.05
0.02
0.01
.2 F
Q
GS
50K
3mA
Current Sampling Resistors
(THERMAL RESPONSE)
0.0001
.3 F
SINGLE PULSE
I
Q
Charge
Q
G
GD
G
D.U.T.
I
D
0.001
+
-
V
DS
t , Rectangular Pulse Duration (sec)
1
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.1
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
10V
1. Duty factor D =
2. Peak T
V
Notes:
t
d(on)
GS
V
DS
1
J
t
= P
r
µs
DM
x Z
t / t
1
thJA
D.U.T.
P
2
DM
+ T
10
R
D
A
t
t
1
d(off)
t
2
t
f
IRF7503
+
-
V
100
DD