IRF7503TR International Rectifier, IRF7503TR Datasheet - Page 2

• Manufacturer Part Number: IRF7503TR
• Description: MOSFET 2N-CH 30V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7503TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7503TR; IRF7503; IRF7503CT

IRF7503
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
I
I
V
t
Q
R
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
SM
S
rr
GSS
d(on)
r
d(off)
f
DSS
V
(BR)DSS
DS(on)
GS(th)
fs
SD
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
J
150°C
1.7A, di/dt
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Gate-to-Source Reverse Leakage
120A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Surface mounted on FR-4 board, t
Pulse width
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– 0.059 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.9
30
–––
–––
–––
––– -100
–––
––– 0.135
––– 0.222
–––
–––
–––
–––
–––
210
1.2
2.5
7.8
4.7
5.3
80
32
40
48
10
12
1.25
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.2
1.0
1.8
3.8
14
300µs; duty cycle
60
72
25
12
V/°C
nC
nC
µA
ns
pF
ns
nA
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 6.1
= 8.7
= V
= 10V, I
= 24V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 6 and 9
= 15V
= 0V
2%.
GS
10sec.
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 1.7A, V
= 1.7A
= 250µA
= 0.85A
= 1.7A
= 0.85A
= 0V
= 0V, T
Conditions
D
= 1mA
GS
J
= 125°C
= 0V
G
D
S