IRF5852 International Rectifier, IRF5852 Datasheet - Page 3

• Manufacturer Part Number: IRF5852
• Description: MOSFET 2N-CH 20V 2.7A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5852

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
100
0.1
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1.5
0.1
TOP
BOTTOM
V
V
DS
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.0
1
T = 25 C
J
1.50V
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
2.5
10
= 15V
T = 150 C
J
°
°
3.0
100
100
0.1
10
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
V
2.7A
DS
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
Vs. Temperature
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
1.50V
IRF5852
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
100
3