IRF5852 International Rectifier, IRF5852 Datasheet - Page 6

• Manufacturer Part Number: IRF5852
• Description: MOSFET 2N-CH 20V 2.7A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5852

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5852
Fig 11. Typical On-Resistance Vs. Gate
6
0.14
0.12
0.10
0.08
0.06
4.5 V
Fig 13a. Basic Gate Charge Waveform
2.0
V
G
V GS, Gate -to -Source Voltage (V)
3.0
Q
GS
Voltage
4.0
I D = 2.7A
Charge
Q
Q
5.0
GD
G
6.0
7.0
8.0
Fig 12. Typical On-Resistance Vs. Drain
0.30
0.20
0.10
0.00
Fig 13b. Gate Charge Test Circuit
12V
0
V
GS
Same Type as D.U.T.
Current Regulator
2
.2 F
V GS = 2.5V
I D , Drain Current (A)
50K
3mA
Current
4
Current Sampling Resistors
.3 F
I
G
6
V GS = 4.5V
D.U.T.
www.irf.com
8
I
D
+
-
10
V
DS
12