IRF5852 International Rectifier, IRF5852 Datasheet - Page 5

• Manufacturer Part Number: IRF5852
• Description: MOSFET 2N-CH 20V 2.7A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5852

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D = 0.50
25
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
°
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
r
J
DM
x Z
1
thJA
IRF5852
P
2
t
DM
1
d(off)
+ T
A
t
1
t
f
t
2
+
-
5
10