IRF7341QTRPBF International Rectifier, IRF7341QTRPBF Datasheet

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Benefits Advanced Process Technology • Dual N-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allowed up to Tjmax • Lead-Free • Description These HEXFET ® Power MOSFET’ Dual SO-8 package utilize the lastest ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 175 20µs PULSE WIDTH ...

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0V MHZ C iss = 1200 SHORTED C rss = C gd 1000 C oss = Ciss 800 600 400 Coss 200 ...

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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...

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7.1A 0.030 0.020 2.0 4.0 6.0 8.0 10.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. ...

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Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 10% Duty Cycle 120 5.1A 100 ...

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SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...