SI4430BDY-T1-GE3 Vishay, SI4430BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4430BDY-T1-GE3
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4430BDY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4430BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
60
10
6
5
4
3
2
1
0
1
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
5
10
= 20 A
On-Resistance vs. Drain Current
0.2
= 15 V
V
V
T
GS
J
SD
Q
= 150 °C
10
= 4.5 V
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
20
0.4
I
D
- Drain Current (A)
Gate Charge
15
30
0.6
V
20
GS
= 10 V
40
0.8
25
T
J
= 25 °C
50
1.0
30
1.2
60
35
4000
3500
3000
2500
2000
1500
1000
0.025
0.020
0.015
0.010
0.005
0.000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 20 A
5
= 10 V
V
2
T
DS
V
0
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
10
- Gate-to-Source Voltage (V)
C
25
oss
Capacitance
4
50
15
Vishay Siliconix
C
Si4430BDY
iss
75
6
20
I
D
www.vishay.com
100
= 20 A
25
8
125
150
30
10
3