SI4430BDY-T1-E3

Manufacturer Part NumberSI4430BDY-T1-E3
DescriptionTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14A I(D),SO
ManufacturerVishay
SeriesTrenchFET®
SI4430BDY-T1-E3 datasheet
 


Specifications of SI4430BDY-T1-E3

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs4.5 mOhm @ 20A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id3V @ 250µA
Gate Charge (qg) @ Vgs36nC @ 4.5VPower - Max1.6W
Mounting TypeSurface MountPackage / Case8-SOIC (3.9mm Width)
Minimum Operating Temperature- 55 CConfigurationSingle Quad Drain Triple Source
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0045 Ohm @ 10 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current14 APower Dissipation1600 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSI4430BDY-T1-E3TR
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PRODUCT SUMMARY
V
(V)
R
(Ω)
DS
DS(on)
0.0045 at V
= 10 V
GS
30
0.006 at V
= 4.5 V
GS
SO-8
S
1
8
S
2
7
S
3
6
G
4
5
Top View
Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free)
Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
N-Channel 30-V MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
I
(A)
Q
(Typ.)
D
g
Available
20
• TrenchFET
24
17
• 100 % R
D
D
D
D
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
A
I
D
T
= 70 °C
A
I
DM
a
I
S
I
AS
L = 0.1 mH
E
AS
T
= 25 °C
A
P
D
T
= 70 °C
A
T
, T
J
stg
Symbol
t ≤ 10 s
a
R
thJA
Steady State
R
Steady State
thJF
Si4430BDY
Vishay Siliconix
®
Power MOSFETs
Tested
g
D
G
S
N-Channel MOSFET
10 s
Steady State
30
± 20
20
14
16
11
± 60
2.7
1.40
40
80
3.0
1.6
2.0
1.0
- 55 to 150
Typical
Maximum
34
41
67
80
15
19
www.vishay.com
Unit
V
A
mJ
W
°C
Unit
°C/W
1

SI4430BDY-T1-E3 Summary of contents

  • Page 1

    ... GS SO Top View Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free) Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

  • Page 2

    ... Si4430BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

  • Page 3

    ... Gate Charge 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73184 S09-0228-Rev. D, 09-Feb- °C J 0.8 1.0 1.2 Si4430BDY Vishay Siliconix 4000 3500 C iss 3000 2500 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1 ...

  • Page 4

    ... Si4430BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (on °C C 0.1 Single Pulse ...

  • Page 5

    ... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73184. Document Number: 73184 S09-0228-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4430BDY Vishay Siliconix - www.vishay.com 10 5 ...

  • Page 6

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...