SI4430BDY-T1-E3 Vishay, SI4430BDY-T1-E3 Datasheet - Page 2

no-image

SI4430BDY-T1-E3

Manufacturer Part Number
SI4430BDY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14A I(D),SO
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4430BDY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0045 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4430BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
100 000
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4430BDY-T1-E3
Quantity:
2 454
Company:
Part Number:
SI4430BDY-T1-E3
Quantity:
500
Company:
Part Number:
SI4430BDY-T1-E3
Quantity:
70 000
Si4430BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
60
50
40
30
20
10
0
0
V
GS
1
a
a
= 10 V thru 4 V
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
Symbol
3
R
V
J
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
Q
R
t
= 25 °C, unless otherwise noted
t
SD
t
rr
fs
gs
gd
r
f
g
g
rr
4
3 V
V
V
I
DS
DS
D
I
≅ 1 A, V
F
= 15 V, V
= 30 V, V
V
V
5
V
V
= 2.7 A, dI/dt = 100 A/µs
V
V
DS
V
V
I
DS
S
DD
DS
DS
GS
GS
DS
Test Conditions
= 2.7 A, V
= 0 V, V
= V
= 30 V, V
≥ 5 V, V
= 15 V, R
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
= 0 V, T
GS
D
GS
GS
D
D
D
= 250 µA
GS
L
= ± 20 V
= 20 A
= 20 A
= 10 V
= 17 A
= 15 Ω
= 0 V
= 0 V
J
g
D
= 70 °C
= 6 Ω
= 20 A
60
50
40
30
20
10
0
0.0
0.5
Min.
1.0
0.5
40
V
1.0
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
1.5
0.0037
0.0048
Typ.
0.72
10.5
7.5
1.1
80
24
20
14
60
18
35
32
T
S09-0228-Rev. D, 09-Feb-09
C
2.0
25 °C
= 125 °C
Document Number: 73184
2.5
0.0045
± 100
0.006
Max.
3.0
1.1
1.7
10
36
30
22
90
30
50
50
1
3.0
- 55 °C
3.5
Unit
nC
nC
nA
µA
ns
Ω
Ω
V
A
S
V
4.0

Related parts for SI4430BDY-T1-E3