MOSFET N-CH 250V 2.7A D2PAK

IRF614SPBF

Manufacturer Part NumberIRF614SPBF
DescriptionMOSFET N-CH 250V 2.7A D2PAK
ManufacturerVishay
IRF614SPBF datasheet
 

Specifications of IRF614SPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 1.6A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C2.7AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs8.2nC @ 10VInput Capacitance (ciss) @ Vds140pF @ 25V
Power - Max3.1WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN Channel
Continuous Drain Current Id2.7ADrain Source Voltage Vds250V
On Resistance Rds(on)2ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VConfigurationSingle
Resistance Drain-source Rds (on)2 OhmsDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current2.7 A
Power Dissipation3.1 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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IRF614S, SiHF614S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
a
(PCB Mount)
Maximum Junction-to-Case (Drain)
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS T
= 25 °C, unless otherwise noted
J
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient
DS
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
SYMBOL
TYP.
R
-
thJA
R
-
thJA
R
-
thJC
SYMBOL
TEST CONDITIONS
V
V
= 0 V, I
= 250 µA
DS
GS
D
ΔV
/T
Reference to 25 °C, I
DS
J
D
V
V
= V
, I
= 250 µA
GS(th)
DS
GS
D
I
V
= ± 20 V
GSS
GS
V
= 250 V, V
DS
GS
I
DSS
V
= 200 V, V
= 0 V, T
DS
GS
R
V
= 10 V
I
= 1.6 A
DS(on)
GS
D
g
V
= 50 V, I
= 1.6 A
fs
DS
D
C
iss
V
= 0 V,
GS
C
V
= 25 V,
oss
DS
f = 1.0 MHz, see fig. 5
C
rss
Q
g
I
= 2.7 A, V
D
Q
V
= 10 V
gs
GS
see fig. 6 and 13
Q
gd
t
d(on)
t
r
V
= 125 V, I
= 2.7 A,
DD
D
= 24 Ω, R
= 45 Ω, see fig. 10
t
R
d(off)
G
D
t
f
Between lead,
L
D
6 mm (0.25") from
package and center of
L
S
die contact
MOSFET symbol
I
S
showing the
integral reverse
I
SM
p - n junction diode
V
T
= 25 °C, I
= 2.7 A, V
SD
J
S
t
rr
T
= 25 °C, I
= 2.7 A, dI/dt = 100 A/µs
J
F
Q
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by L
on
MAX.
UNIT
62
40
°C/W
3.5
MIN.
TYP.
MAX.
250
-
-
= 1 mA
-
0.39
-
2.0
-
4.0
-
-
± 100
= 0 V
-
-
25
= 125 °C
-
-
250
J
b
-
-
2.0
b
0.90
-
-
-
140
-
-
42
-
-
9.6
-
-
-
8.2
= 200 V,
DS
-
-
1.8
b
-
-
4.5
-
7.0
-
-
7.6
-
b
-
16
-
-
7.0
-
D
-
4.5
-
G
-
7.5
-
S
D
-
-
2.7
G
-
-
8.0
S
b
= 0 V
-
-
2.0
GS
-
190
390
b
-
0.64
1.3
and L
S
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
UNIT
V
V/°C
V
nA
µA
Ω
S
pF
nC
ns
nH
A
V
ns
µC
)
D