IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 2

• Manufacturer Part Number: IRFP22N50APBF
• Description: MOSFET N-CH 500V 22A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP22N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 277W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 277000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP22N50APBF

IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
a
= 25 °C, unless otherwise noted)
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
V
C
R
V
oss
R
t
t
R
R
I
I
C
C
V
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
t
I
SM
t
thCS
on
thJA
thJC
oss
oss
t
t
DS
rss
S
SD
rr
iss
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
V
J
GS
GS
R
DS
GS
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
J
= 10 V
= 10 V
= 4.3 , R
= 400 V, V
= 0 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
oss
0.24
TEST CONDITIONS
DS
DS
DD
GS
DS
-
-
= 500 V, V
while V
= V
= 250 V, I
F
= 0 V, I
V
= 50 V, I
V
= 22 A, dI/dt = 100 A/µs
V
GS
DS
V
GS
GS
S
V
D
GS
I
DS
D
DS
= ± 30 V
= 22A, V
= 11, see fig. 10
= 25 V,
, I
V
= 0 V,
= 22 A, V
see fig. 6 and 13
= 0 V, T
DS
D
DS
= 400 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
= 250 µA
= 250 µA
D
is rising from 0 % to 80 % V
GS
= 0 V to 400 V
= 13 A
I
D
= 22 A,
D
= 13 A
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
b
= 400 V,
b
b
MAX.
0.45
D
S
b
b
40
c
-
b
MIN.
500
2.0
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0446-Rev. C, 14-Mar-11
DS
Document Number: 91207
.
TYP.
3450
4935
0.55
513
137
264
570
6.1
27
26
94
47
47
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.23
S
250
120
850
4.0
1.5
9.2
25
32
52
22
88
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
pF
nC
µC
ns
ns

V
V
S
A
V