MOSFET N-CH 500V 22A TO-247AC

IRFP22N50APBF

Manufacturer Part NumberIRFP22N50APBF
DescriptionMOSFET N-CH 500V 22A TO-247AC
ManufacturerVishay
IRFP22N50APBF datasheets
 


Specifications of IRFP22N50APBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs230 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)500VCurrent - Continuous Drain (id) @ 25° C22A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs120nC @ 10V
Input Capacitance (ciss) @ Vds3450pF @ 25VPower - Max277W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.23 Ohm @ 10 VDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current22 A
Power Dissipation277000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id22A
Drain Source Voltage Vds500VOn Resistance Rds(on)230mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFP22N50APBF
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Switch Mode Power Supply (SMPS)
l
UninterruptIble Power Supply
l
High Speed Power Switching
l
Lead-Free
l
Low Gate Charge Qg results in Simple
l
Drive Requirement
Improved Gate, Avalanche and Dynamic
l
dv/dt Ruggedness
Fully Characterized Capacitance and
l
Avalanche Voltage and Current
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt ƒ
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
Full Bridge Converters
l
Power Factor Correction Boost
l
Notes  through …
are on page 8
Document Number: 91207
SMPS MOSFET
V
DSS
500V
@ 10V
GS
@ 10V
GS
300 (1.6mm from case )
HEXFET Power MOSFET
R
max
I
DS(on)
D
0.23Ω
22A
TO-247AC
Max.
Units
22
14
A
88
277
W
2.2
W/°C
± 30
V
4.8
V/ns
-55 to + 150
°C
10 lbf•in (1.1N•m)
2/11/04
www.vishay.com
1

IRFP22N50APBF Summary of contents

  • Page 1

    ... Notes  through … are on page 8 Document Number: 91207 SMPS MOSFET V DSS 500V @ 10V GS @ 10V GS 300 (1.6mm from case ) HEXFET Power MOSFET R max I DS(on) D 0.23Ω 22A TO-247AC Max. Units 277 W 2.2 W/°C ± 4.8 V/ns - 150 °C 10 lbf•in (1.1N•m) 2/11/04 www.vishay.com 1 ...

  • Page 2

    ... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 13A „ 250µ 0V 125° Conditions = 13A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V … DS Max. Units 1180 Max. Units 0.45 ––– °C/W 40 Conditions „ = 22A 22A www.vishay.com 2 ...

  • Page 3

    ... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 22A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

  • Page 4

    ... Fig 8. Maximum Safe Operating Area 22A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE 100 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° 10ms ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 120 10000 4 ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91207 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0 www.vishay.com 5 ...

  • Page 6

    ... Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 640 630 620 610 600 590 580 + 570 0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 9.8A 14A BOTTOM 22A 50 75 100 125 ° J Vs. Drain Current Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 ...

  • Page 7

    ... Voltage Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91207 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + - V =10V www.vishay.com 7 ...

  • Page 8

    ... LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 1 - Gate 1 - Gate 0.80 (.031 Drain 1 - GATE 2 - Collector 0.40 (.016 DRAIN 3 - Source 3 - Emitter 2.60 (.102 SOURCE 4 - Drain 4 - Collector 2.20 (.087 DRAIN PART NUMBER 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H DSS TAC Fax: (310) 252-7903 www.vishay.com 02/04 8 ...

  • Page 9

    ... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...