IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 8

• Manufacturer Part Number: IRFP22N50APBF
• Description: MOSFET N-CH 500V 22A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP22N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 277W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 277000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP22N50APBF

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Notes:
Document Number: 91207
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Repetitive rating; pulse width limited by
I
R
T
max. junction temperature. (See fig. 11)
Starting T
SD
J
G
≤ 150°C
= 25Ω, I
≤ 22A, di/dt ≤ 190A/µs, V
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
5.45 (.215)
2.40 (.094)
2.00 (.079)
J
= 25°C, L = 4.87mH
AS
2X
2X
= 22A. (See Figure 12a)
EXAMPLE:
1
15.90 (.626)
15.30 (.602)
- B -
2
T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
DD
3.40 (.133)
3.00 (.118)
3
≤ V
3X
(BR)DSS
0.25 (.010) M
1.40 (.056)
1.00 (.039)
- A -
4.30 (.170)
3.70 (.145)
2X
,
- C -
5.50 (.217)
0.25 (.010)
3.65 (.143)
3.55 (.140)
5.50 (.217)
4.50 (.177)
„
…
C A S
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
M
oss
Data and specifications subject to change without notice.
D
INT ERNATIONAL
eff. is a fixed capacitance that gives the same charging time
oss
RECT IFIER
B
ASSEMBLY
LOT CODE
LOGO
while V
M
DS
is rising from 0 to 80% V
- D -
56
IRFPE30
3X
2.50 (.089)
1.50 (.059)
2.60 (.102)
2.20 (.087)
035H
57
5.30 (.209)
4.70 (.185)
0.80 (.031)
0.40 (.016)
4
NOTES:
1 DIMENSIONING & TOLERANCING
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
PER ANSI Y14.5M, 1982.
TO-247-AC.
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Hexfet
1 - Gate
2 - Drain
3 - Source
4 - Drain
LEAD ASSIGNMENTS
TAC Fax: [phone]
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DSS
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
www.vishay.com
02/04
8